IRF6215STRRPBF ,-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.
Absolute Maximum Ratings
HEXFETO Power MOSFET
D Voss = -150V
j , RDS(on) ..
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IRF6215SPBF-IRF6215STRRPBF
-150V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
Tart, Rectifier
Lead-Free
Advanced Process Technology
Surface Mount (IRF621SS)
PD - 95132
|RF6215S/LPbF
HEXFET® Power MOSFET
D l/ross = -150V
Low-profile through-hole (IRF6215L)
175°C Operating Temperature
Fast Switching
P-Channel
q Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized devicedesignthatHEXFET PowerMOSFETs
are well knownfor, providesthedesignerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
RDSW = 0.2952
|D=-13A
highest power capability and the lowest possible on- DzPak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25''C Continuous Drain Current, Vss @ -10V© -13
lo @ To = 100°C Continuous Drain Current, Vss © -1OV© 9.0 A
bs, Pulsed Drain Current (D6) -44
PD @TA = 25°C Power Dissipation 3.8 W
Po @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 WPC
Vas Gaie-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy©S 310 m]
IAR Avalanche CurrentC0 6.6 A
EAR Repetitive Avalanche EnergyCD 11 tttl
dv/dt Peak Diode Recovery dv/dt ©© -5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 1.4 “CM
Rm Jureion-to-Ambient ( PCB Mountedsteady-stater1 - 4O
1
4/21/05
IRF6fM5S/LPbF International
TOR Rectifier
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 - - V l/ss = 0V, ID = -250PA
Ameoss/ATJ Breakdown Voltage Temp. Coefficient - -O.20 - VPC Reference to 25°C, ID = -1mA©
RDSton) Static Drajn-to-Source On-Resistance - _ 3:: Q "ti', _,-. 118:; ll:;':::®©TJ = 1500 C
Vesm-l) Gate Threshold Voltage -2.0 - -4.0 V Vos = Vas, ks = -250pA
95 Forward Transconductance 3.6 - - S Vos = -25V, ID = -6.6A©
. - - -25 Vos = 150V, Vos = 0V
bss Drain-to-Source Leakage Current - -- -250 PA Vos = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 I/ss = -20V
less Gate-to-Source Reverse Leakage - - -100 nA VGS = 20V
A Total Gate Charge - - 66 ks = -6.6A
095 Gate-to-Source Charge - - 8.1 nC I/os = -120V
A, Gate-to-Drain ('Miller') Charge - - 35 VGS = -10V, See Fig. 6 and 13 ©S
tam") Tum-On Delay Time - 14 - VDD = -751/
t, RiseTime - 36 - ID = -6.6A
1d om Turn-Off Delay Time -- 53 - Rs = 6.89
t. FallTime - 37 - RD = 129. See Fig. 10 ©S
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 860 - VGS = 0V
Coss Output Capacitance - 220 -- pF Vos = -25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - -ll MOSFET symbol 0
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse a
(Body Diode) co - - M4 p-n junction diode. S
Vso Diode Forward Voltage - - -1.6 V To = 25°C, ls = -6.6A, Vss = 0V (D
trr Reverse Recovery Time - 160 240 ns Tu = 25°C, IF = -6.6A
G, Reverse Recovery Charge - 1.2 1.7 PC di/dt = -100A/us @CS)
ton Forward Tum-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+to)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width s 300us; duty cycle s 2%.
max. junction temperature. ( See fig. 11 )
© Starting Tr= 25°C, L = 14mH © Uses IRF6215 data and test conditions
Rs = 250, IAS = -6.6A. (See Figure 12)
© Iso S -6.6A, di/dt S -620A/ps, Vor, S Viewvoss,
T J 5 175°C
" When mounted on l'' square PCB (FR-4 or G-IO Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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