IRF6215 ,-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IRF6215L ,-150V Single P-Channel HEXFET Power MOSFET in a TO-262 packagePD - 91643IRF6215S/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF6215S)V = ..
IRF6215S ,-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IRF6215SPBF ,-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
TOR RectifierTous-tiris.,
. Advanced Process Technology
a Surface Mount (IRF62 ..
IRF6215STRR ,-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF6215STRRPBF ,-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.
Absolute Maximum Ratings
HEXFETO Power MOSFET
D Voss = -150V
j , RDS(on) ..
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IRF6215
-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
PD - 91479B
IRF6215
P-Channel
Description
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
HEXFET6 Power MOSFET
VDSS = -150V
2 V RDS(on) = 0.299
s ID = -13A
F ifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ -10V -13
ID @ Tc = 100°C Continuous Drain Current, Vss @ -10V -9.0 A
IDM Pulsed Drain Current (O -44
Po @Tc = 25''C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 310 mJ
IAR Avalanche CurrentC) -6.6 A
EAR Repetitive Avalanche Energy© 11 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibfoin (1.1 Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1 .4
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
5/13/98
IRF6215 International
IOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage -150 - - V I/ss = 0V, ID = 250pA
AV
. . . - - 0.29 l/ss = -1OV, ID = -6.6A C4), T: = 25°C
RDS(Dn) Static Drain-to-Source On-Resistance _ - 0.58 n VGS = -10V, ID = -6.6 A ©, TJ = 150°C
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos = VGS, ID = -250pA
gts FonNard Transconductance 3.6 - - S VDs = -50V, ID = -6.6A
loss Drain-to-Source Leakage Current - - _22550 pA x3: = _::g:: x: = g, To = 1 50'' C
Gate-to-Source Forward Leakage - - 100 l/ss = 20V
Isss Gate-to-Source Reverse Leakage - - -100 nA I/ss = -20V
09 Total Gate Charge - - 66 ID = -6.6A
Qgs Gate-to-Source Charge - - 8.1 nC Vros = -120V
di Gate-to-Drain ("Miller") Charge - - 35 VGS = -10V, See Fig. 6 and 13 ©
tum”) Turn-On Delay Time - 14 - VDD = -75V
tr Rise Time - 36 'r--- ns ID = -6.6A
tum) Turn-Off Delay Time - 53 - Rs = 6.89
tr Fall Time - 37 - RD = 129, See Fig. 10
. Between lead, D
Lo Internal Drain Inductance - 4.5 - 6mm (0.25in.) _
nH from package SQ] )
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 860 - I/cs = 0V
Coss Output Capacitance - 220 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -13 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - -44 p-n junction diode. s
VSD Diode Forward Voltage - - -1.6 V To = 25°C, ls = -6.6A, VGS = 0V ©
trr Reverse Recovery Time - 160 240 ns TJ = 25°C, IF = -6.6A
G, Reverse RecoveryCharge - 1.2 1.7 pC di/dt = -100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Ftg. 11 )
© Starting TJ = 25°C, L = 14mH
RG = 259, IAS = -6.6A. (See Figure 12)
TJs175°C
© la, f -6.6A, di/dt f -620/Ups, VDD f V(BR)DSSv
G) Pulse width S 300ps; duty cycle S 2%.
