IRF620PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR
Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
q Repetitive A ..
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IRF620PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
h'tternatiDnall
Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.317H
lRF620
Voss =
RDS(OFI) T."-" 0.809
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciai-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
I Parameter Max, Unitgj
IPR, 1933530 Continuous Drain Current, Ves © 10 V 5.2 l
ID @ Tc = 100°C Continuous Drain Current, VGS © 10 V 3.3 A
IDM Pulsed Drain Current co 18
f'_re%--c--_ryif(1_ftvyfy_r_iyiipeti_tT, .__ __liit._..____._.__, - IN S
Linear Derating Factor 0.40 T WPC J
Alii, m “ - “W f_atirto-Source Voltage $20 V i
EAs Single Pulse Avalanche Energy Q) 110 mJ 1
Lil- Avalanche Current (D 5.2 A l
EAR Rapsflmflézajanq‘sfinflgwwWWW“ -h5.0 mJ I
dv/dt LPeak Diode Recovery dv/dt C3) 5.0 V/ns
Tu Operating Junction and -55 to +150
Tsre Storage Temperature Range 00 l
___, Soldering Temperature, for 10 seconds 300 (1.6mm from case) ,
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RM - - - - Ayyilipty_t/y9jilyt_,_________.._., ___ = - 2.5
Rhos Case-to-Sink, Flat, Greased Surface - 0.50 - - °C/W
Ras J Junction-to-Ambient - --- l 62 -
IRF620
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
IS hit
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS _ Drain-to-Source Breakdown Voltage 200 - - V VGs=0V, lo: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - VPC Reference to 25°C, ID: 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.80 f2 Vss=10V, lo=3.1A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Voss-l/as, lo: 250gA
grs Forward Transconductance 1.5 - - S VDs=50V, b=3AA ©
loss l Drain/o-Source Leakage Current - - 25 . WA VDSzZOOV’ Var=0V
- - 250 I VDs=160V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-2OV
09 Total Gate Charge - .._rv 14 ID--4.8A
Qgs Gate-to-Source Charge - - 3.0 nC Vos=160V
di Gate-to-Drain ("Miller") Charge - m 7.9 Ves=10V See Fig. 6 and 13 Cw)
tdion) Turn-On Delay Time - 7.2 - VDD=100V
t, Rise Time - 22 - ns b=4.8A
td(01f) Turn-Off Delay Time -- 19 - RG=1BQ
t, Fall Time - 13 - RD=ZOQ See Figure 10 ©
Lo Internal Drain Inductance .-. 4.5 - g imefcg 9165: ') iiiij,
nH from package G )
Ls Internal Source Inductance - 7.5 - Ind center df
die contact s
Ciss Input Capacitance - 260 - VGs=OV
'oss Output Capacitance - 100 - PF Vos=25V
Crss Reverse Transfer Capacitance -r-r. 30 - f--1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
Is Continuous Source Current - - 5 2 MOSFET symbol D
(Body Diode) . A showing the Cr,-;':
ISM Pulsed Source Current - - 18 integral reverse G EL
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V To=25oC, ls=5.2A, Ves=OV 3
in Reverse Recovery Time - 150 300 ns , TJ=2500, h:=4.8A
er Reverse Recovery Charge - 0.91 1.8 WC) idi/dt=100A/ps (ii)
:' ton Forward Turn-On Time i Intrinsic turn-on time is neglegible (tum-on is dominated by Ls+LD) I
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
C2) VDD=5OV, starting TJ=25°C, L=6.1mH
Ra=25§2, lAs=5.2A (See Figure 12)
TJS1 50°C
(3) ISDSS2A, di/dtsc95A/ps, VDDSV(BR)DSS.
co Pulse width S 300 us; duty cycle 32%.
