IRF6201TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageFeatures BenefitsLow R (≤ 2.45mΩ @ Vgs = 4.5V) Lower conduction lossesDSonresults in Industry-stan ..
IRF620PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR
Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
q Repetitive A ..
IRF620S ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF621 ,N-Channel Power MOSFETs/ 7A/ 150-200Vapplications, ts) l
such as switching power supplies, converters, AC and DC
motor controls, relay ..
IRF6215 ,-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IRF6215L ,-150V Single P-Channel HEXFET Power MOSFET in a TO-262 packagePD - 91643IRF6215S/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF6215S)V = ..
IS62LV256L-15JI , 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS62LV5128LL-70BI , 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70MI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IS62VV25616LL-70TI , 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
IRF6201TRPBF
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 97500A
International
TOR Rectifier IRF6201PbF
V 20 V HEXFETO Power MOSFET
RDS(on) max -
(@Vss = 4.5V) 2.45 mn s 1 i D
RDS(on) max 2 75 mn S 2 L D
(@VGS = 2.5V) . S 3 E D
09 (typical) 130 nC G 4 E D SO-8
(@TA = 25°C) 27 A
Applications
. OR-ing or hot-swap MOSFET
. Battery operated DC motor inverter MOSFET
. System/Load switch
Features and Benefits
Features Benefits
Low Roam (S 2.45mQ @ Vgs = 4.5V) results in Lower conduction losses
Industry-standard SO-8 package
RoHS compliant containing no lead, no bromide and no halogen
Multi-vendor compatibility
Environmentally Friendly
Orderable part number Package Type Standard Pack Note
Form Quantity
IRF6201PbF SO8 Tube/Bulk 95
IRF6201TRPbF SOB Tape and Reel 4000
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t12
ID © TA = 25°C Continuous Drain Current, Vss © 4.5V 27
ID © TA = 70°C Continuous Drain Current, Vas @ 4.5V 22 A
IDM Pulsed Drain Current OD 110
Po @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
Tu Operating Junction and -55 to + 150 I
TSTG Storage Temperature Range
1
1 1/1 1/2010
IRF6201PbF
International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 4.6 - mV/°C Reference to 25°C, Ir, = 1mA
Rom . . . - 1.90 2.45 Vss = 4.5V, ID = 27A ©
( ) Static Drain-to-Source On-Resistance _ 2.10 2.75 mg Vas = 2.5V, ID = 22A ©
Vesuh) Gate Threshold Voltage 0.5 -- 1.1 V Vos = VGS, ID = 100PA
loss Drain-to-Source Leakage Current --.- --.- 1.0 A Vos = 16V, Ves = 0V
- - 150 p Vos = 16V, Vss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
th Total Gate Charge - 130 195 Ves = 4.5V
Qgs Gate-to-Source Charge - 16 - nC Vos = 10V
di Gate-to-Drain Charge - 60 - ID = 22A
td(on) Turn-On Delay Time _ 29 - VDD = 20V, Vas = 4.5V
t, Rise Time - 100 - ns ID = I.OA
tam) Turn-Off Delay Time - 320 - Rs = 6.89
t, Fall Time -- 265 -- See Figs. 10a & 10b
Ciss Input Capacitance - 8555 - Vss = 0V
Coss Output Capacitance - 1735 - pF Vos = 16V
Crss Reverse Transfer Capacitance - 1290 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current _ _ 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) OD p-n junction diode. S
Vso Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 2.5A, VGS = 0V ©
trr Reverse Recovery Time - 82 120 ns To = 25°C, IF = 2.5A, VDD = 16V
a,, Reverse Recovery Charge -- 180 270 no di/dt = 100/ps co
Thermal Resistance
Parameter Typ. Max. Units
Rsur, Junction-to-Drain Lead © - 20 °C/W
RNA Junction-to-Ambient © - 50
Notes:
CD Repetitive rating; pulse width limited by max. junction temperature.
OD Pulse width f 400ps; duty cycle 3 2%.
© When mounted on 1 inch square copper board.
© Re is measured at TJ approximately 90°C.
