IRF610B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 200V, R = 1.5Ω @V = 10 VDS(on) ..
IRF610B ,200V N-Channel MOSFETIRF610B/IRFS610BNovember 2001IRF610B/IRFS610B200V N-Channel MOSFET
IRF610PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
ISBR
Rectifier
PD-9.326l
IRF610
HEXFET® Power MOSFET
. Dynamic dv/d ..
IRF610PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF610S ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF610STRL ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational PD-9.899
EOR Rectifier IlRF61 OS
HEXFET8 Power MOSFET
. Surface Mount
. Avail ..
IS62LV256-45U , 32K x 8 LOW VOLTAGE STATIC RAM
IS62LV256-45U , 32K x 8 LOW VOLTAGE STATIC RAM
IS62LV256-70TI , 32K x 8 LOW VOLTAGE STATIC RAM
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IRF610B
200V N-Channel MOSFET
IRF610B/IRFS610B November 2001 IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 200V, R = 1.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.2 nC) planar, DMOS technology. • Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF610B IRFS610B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 3.3 3.3 * A D C - Continuous (T = 100°C) 2.1 2.1 * A C I (Note 1) Drain Current - Pulsed 10 10 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 40 mJ AS I Avalanche Current (Note 1) 3.3 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 38 22 W D C - Derate above 25°C 0.31 0.18 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF610B IRFS610B Units R Thermal Resistance, Junction-to-Case Max. 3.28 5.71 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
