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ISBR
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IRF6100PBF
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package
International
TOR Rectifier
Ultra Low RDS(on) per Footprint Area
Low Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
Lead-Free
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET'" package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET'" the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
PD - 96012B
IRF6100 Dbl:
HEXFET8 Power MOSFET
RDS(on) max lD
0.065n@VGs = -4.5V -5.1A
0.095n@Vss = -2.5V -4.1A
s FlipFETTM ISOMETRIC
Parameter
Max. Units
Drain- Source Voltage
ID @ TA = 25°C
Continuous Drain Current, Vas @ 4.5V
ID @ TA = 70°C
Continuous Drain Current, Vss @ 4.5V
Pulsed Drain Current CD
PD@TA--250C
Power Dissipation©
PD @TA = 70°C
Power Dissipation©
Linear Derating Factor
Gate-to-Source Voltage
Tu, TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient])
ReJ-PCB
Junction-to-PCB mounted
05/1 7/06
|RF61OOPbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATo Breakdown Voltage Temp. Coefficient - -0.010 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.065 Q l/ss = M.5V, ID = -5.1A ©
- - 0.095 Ves = -2.5V, ID = -4.1A ©
Vesah) Gate Threshold Voltage -O.45 - -1.2 V Vos = Vas, ID = -250pA
gfs Forward Transconductance 9.8 - - S VDs = -10V, ID = -5.IA
loss Drain-to-Source Leakage Current - - -1 .0 p A Vros = -20V, VGS = 0V
- - -25 Vos = -16V, Vas = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 12V
Gate-to-Source Reverse Leakage - - -100 Ves = -12V
% Total Gate Charge - 14 21 ID = -5.1A
Qos Gate-to-Source Charge - 1.9 2.9 nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 5.0 7.5 VGS = -5.0V
tdmn) Turn-On Delay Time - 12 - VDD = -10V
tr Rise Time - 12 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 50 - Re = 5.89
tf Fall Time - 50 - Vss = -4.5V ©
Ciss Input Capacitance - 1230 - Vss = 0V
Cogs Output Capacitance - 250 - pF Vros = -15V
Crss Reverse Transfer Capacitance - 180 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.2 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -33 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.2A, VGS = 0V ©
trr Reverse Recovery Time - 48 72 ns Tu = 25°C, IF = -2.2A
Qrr Reverse RecoveryCharge - 34 51 nC di/dt = 1OOA/ps C)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
© When mounted on 1 inch square 2oz copper on FR-4.
