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IRF5852-IRF5852TR
20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 package
International
a:aRRectifier
PD - 93999A
IRF5852
HEXFET© Power MOSFET
0 Ultra Low On-Resistance VDss RDS(on) max in) ID
q Dual N-Channel MOSFET 20 V 0.090@VGs = 4.5V 2.7A
q Surface Mount 0.120@VGs = 2.5V 2.2A
q Available in Tape & Reel
0 Low Gate Charge
Description
These N-channelMOSFETs fromlnternationalRectifer Gl 1 6 DI
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This S2 2 5 Sl
benefit provides the designerwith an extremely efhcient jjih,
device for use in battery and load management
applications. 62': 2'02
This Dual TSOP-6 package is ideal for applications TSOP-6 Top View
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDs(on)
reduction enables an increase in current-handling
capability.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGs @ 4.5V 2.7
ID @ TA-- 70°C Continuous Drain Current, VGS © 4.5V 2.2 A
IDM Pulsed Drain Current (D 11
PD @TA = 25°C Power Dissipation © 0.96 W
Po @TA = 70°C Power Dissipation© 0.62
Linear Derating Factor 7.7 mW/°C
VGS Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 130 °C/W
1
1/13/03
IRF5852 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, lo = 250PA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.016 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 0.090 Q N/ss = 4.5V, lo = 2.7A ©
- - 0.120 N/ss = 2.5V, ID = 2.2A ©
VGS(th) Gate Threshold Voltage 0.60 - 1.25 V Vros = VGs, ID = 250pA
gfs Forward Transconductance 5.2 - - S Vos = 10V, ID = 2.7A
. - - 1.0 Vos =16V,VGS = OV
I Drain-to-Source Leaka e Current
DSS g - - 25 PA Vros = 16V, VGS = OV, T J = 70°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -12V
09 Total Gate Charge - 4.0 6.0 lo = 2.7A
Qgs Gate-to-Source Charge - 0.95 - nC Vros = 16V
di Gate-to-Drain ("Miller") Charge - 0.88 - VGS = 4.5V ©
tam) Turn-On Delay Time - 6.6 - VDD = 10V ©
tr Rise Time - 1.2 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 15 - Rs = 6.29
tr Fall Time - 2.4 - VGS = 4.5V
Ciss Input Capacitance - 400 - VGS = 0V
Cogs Output Capacitance - 48 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 32 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 0 96 MOSFET symbol D
(Body Diode) - - . showing the
ISM Pulsed Source Current 1 1 integral reverse G
(Body Diode) (D - - p-n junction diode. s
I/so Diode Forward Voltage - - 1.2 V To = 25°C, Is = 0.96A, VGs = 0V C)
trr Reverse Recovery Time - 25 38 ns To = 25°C, IF = 0.96A
Qrr Reverse Recovery Charge - 6.5 9.8 nC di/dt = 100Alps ©
Notes:
co Repetitive rating; pulse width limited by (3 Surface mounted on FR-4 board, ts 5sec.
max. junction temperature.
© Pulse width f 400ps; duty cycle f 2%.
2
