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IRF5851
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
International
Tart, Rectifier
Description
These N and P channel MOSFETsfrom International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
PD-93998B
IRF5851
HEXFET® Power MOSFET
Voss 20V
Rpm.) 0.0909
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
RDS(On) reduction enables an increase in current-handling capability. TSOP-6
Absolute Maximum Ratings
Max. .
Parameter Units
N-Channel P-Channel
VDS Drain-to-Source Voltage 20 -20
lo @ TA = 25°C Continuous Drain Current, VGs @ 10V 2.7 -2.2 A
lo @ TA = 70°C Continuous Drain Current, I/ss @ 10V 2.2 -1.7
IDM Pulsed Drain Current (D 11 -9.0
PD @TA = 25°C Power Dissipation © 0.96 W
PD @TA = 70°C Power Dissipation © 0.62
Linear Derating Factor 7.7 mW/°C
VGs Gate-to-Source Voltage 1 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient © - 130 ''C/W
1
09/02/02
IRF5851
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
. N-Ch 20 - - VGS = 0V, lo = 250pA
V(BR)DSS Drain-to-Source Breakdown Voltage P-Ch -20 - - V VGS = 0V, ID = -250PA
' . N-Ch - 0.016 - a Reference to 25°C, ID = 1mA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient P-Ch - -0.011 - V/ C Reference to 25°C, ID = -1 m A
N-Ch - - 0.090 Vss = 4.5V, ID = 2.7A R)
RDS(ON) Static Drain-to-Source On-Resistance I I tld', n x2: : 35;, |D:2_':§ A R) (3
P-Ch - - 0.220 Was = -2.5v, ID = -1.7A 0)
N-Ch 0.60 - 1.25 Vros = Vas, ID = 250pA
VGS(th) Gate Threshold Voltage P-Ch -0.45 - -1 J V VDS = Vas, ID = -250PA
gfs Forward Transconductance yi)," ii I I s ti', : -11O(;l\} ||DD==2_'27: A g
N-Ch - - 1.0 VDs = 16 V, VGS = 0V
. _ _ P-Ch - - -1.0 VDs = -16V, Ves = 0V
loss Drain to Source Leakage Current N-Ch - - 25 pA VDS = 16 V, Vas = 0V, TJ = 70°C
P-Ch - - -25 VDS = -16V, Vas = 0V, TJ = 70°C
less Gate-to-Source Forward Leakage N-P - - 1100 Vss = A 12V
Qg Total Gate Charge 2:8: I 3'2 id N-Channel
. . ID = 2.7A, Vos =10V,Vss = 4.5V
N-Ch - 0.95 -
Qgs Gate-to-Source Charge P-Ch - 0 66 - nC ©
N-Ch - Li2s" - P-Channel
di Gate-to-Drain ("Miller") Charge P-Ch - 5'7 - b = -2.2A, Vos = -10V, VGS = -4.5V
. N- h - . -
tson) Turn-On Delay Time P-gh - g g - N-Channel
. Vor, =10V, ID =1.0A, Rs = 6.29,
. ' N-Ch - 1.2 -
t, Rise Time P-Ch - 14 - Vss = 4.5V
N-Ch - 15 - ns ©
td(ott) Turn-Off Delay Time P-Ch - 31 - P-Channel
vDD = -1ov, ID = -1.0A, Rs = 6.on,
. N-Ch - 2.4 -
t, Fall Time P-Ch - 28 - Vss = -4.5V
Ciss Input Capacitance 'ttl, I :23 I N-Channel
VGS = 0V, Vos =15V,f =1.0MHz
. N-Ch - 48 -
Coss Output Capacitance P-Ch - 56 - pF
N-Ch - 32 - P-Channel
Crss Reverse TransferCapacitance P-Ch - 4O - Veg = 0V, Vos = -15V, f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min Tvp Max. Units Conditions
I Continuous Source Current (Bod Diode) N-Ch - - 0.96
S y P-Ch - - -0.96 A
N-Ch - - 11
ISM Pulsed Source Current (Body Diode) Ci) P-Ch - - -9.0
N-Ch - - 1.2 V Tu = 25°C, Is = 0.96A, VGS = 0V ©
l/so Diode Forward Voltage P-Ch - - -1.2 Tu = 25°C, Is = -0.96A, Veg = 0V ©
N-Ch - 25 38 ns N-Channel
trr Reverse Recovery Time P-Ch - 23 35 T J = 25°C, IF = 0.96A, di/dt = 1OOA/ps
N-Ch - 6.5 9.8 no P-Channel Q)
Qrr Reverse Recovery Charge P-Ch - 7.7 12 TJ = 25°C, IF = -0.96A, di/dt = -100A/ps
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
© Pulse width s: 400ps; duty cycle S 2%.
(3 Surface mounted on FR-4 board, ts 10sec.
