IRF5850TR ,-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 packageapplications whereTSOP-6printed circuit board space is at a premium and wheremaximum functionali ..
IRF5850TR ,-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 packageapplications.This Dual TSOP-6 package is ideal for
IRF5850TRPBF ,-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 packageapplicationswhere printed circuit board space is at a premium andwhere maximum functionality is ..
IRF5851 ,20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 packagePD-93998BIRF5851®HEXFET Power MOSFETN-Ch P-Ch Ultra Low On-ResistanceG1 D11 6 Dual N and P Chan ..
IRF5852 ,20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 packagePD - 93999AIRF5852HEXFET Power MOSFETV R max ( I Ultra Low On-Resistance DSS DS(on) D Dual N- ..
IRF5852TR ,20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 packageapplicationsTSOP-6Top Viewwhere printed circuit board space is at a premium andwhere maximum fu ..
IS62LV12816BLL-55BI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816BLL-55TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816BLL-70TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-55BI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-55TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-70BI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IRF5850-IRF5850TR
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
PD - 93947A
International
Tart Rectifier IRF5850
HEXFET® Power MOSFET
0 Ultra Low On-Resistance
. Dual P-Channel MOSFET Gl E: E m -
0 Surface Mount -liiE VDSS - -20V
q Available in Tape & Reel S 2 ED Si
0 Low Gate Charge jiieii,
02 J EU D2 RDS(on) = 0.135n
Top View
Description
These P-channel MOSFETs from International Rectiher
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where TSOP-6
maximum functionality is required. l/Wh two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smallerfootprint. Its uniquethermal
design and RDS(on) reduction enables an increase in
current-handling capability.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -20 V
ID @ TA = 25''C Continuous Drain Current, VGS @ -4.5V -2.2
ID @ TA-- 70°C Continuous Drain Current, Vss @ -4.5V -1.8 A
IDM Pulsed Drain Current (D -9.0
PD @TA = 25°C Power Dissipation 0.96 W
Pro @TA = 70°C Power Dissipation 0.62
Linear Derating Factor 7.7 mW/''C
VGS Gate-to-Source Voltage k 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambien) 130 °C/W
1
1/13/03
IRF5850 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - - 0.135 f2 VGS = -4.5V, ID = -2.2A ©
- - 0.220 VGS = -2.5V, ID = -1.9A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 3.5 - - S Vos = -10V, ID = -2.2A
loss Drain-to-Source Leakage Current - - -1.0 pA Vros = -16V, VGS = 0V
- - -25 V93 = -16V, VGS = 0V, T: = 125°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
GSS Gate-to-Source Reverse Leakage - - 100 VGS = 12V
Qg Total Gate Charge - 3.6 5.4 ID = -2.2A
Q95 Gate-to-Source Charge - 0.66 - nC Vos = -10V
di Gate-to-Drain ("Miller") Charge - 0.83 - VGS = -4.5V ©
tdwn) Turn-On Delay Time - 8.3 - N/oo = -10V ©
t, Rise Time - 14 - ns ID = -1.0A
tam) Turn-Off Delay Time - 31 - Rs = 6.09
tr Fall Time - 28 - VGs = -4.5V
Ciss Input Capacitance - 320 - VGS = 0V
Coss Output Capacitance - 56 - pF Vros = -15V
Crss Reverse Transfer Capacitance - 40 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 0 96 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 9 0 integral reverse G
(Body Diode) OD - - . p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -0.96A, VGS = 0V ©
In Reverse Recovery Time - 23 35 ns To = 25°C, IF = -0.96A
Qrr Reverse Recovery Charge - 7.7 12 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by (3) Surface mounted on FR-4 board, ts: Ssec.
max. junction temperature.
© Pulse width f 400ps; duty cycle f 2%.
2
