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IRF5806TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD - 95476B
International
TOR Rectifier IRF5806PbF
Ultra Low On-Resistance HEXFET6 Power MOSFET
P-Channel MOSFET Voss RDSM max ID
iurftlma MOlfrnt & R I -2ov 86mn@Vtss = -4.5v -4.0A
val a e In ape ee 147mn@V = -2.5v -3.0A
Low Gate Charge GS
Lead-Free
Halogen-Free
Description
These P-channelMOSFEI'sfromlnternationalRectifier D 1 ' ' 6 D . _
utilize advanced processing techniques to achieve the J r, _,s,e'i;'is1iiits
extremel low on-resistance er silicon area. This 2 _ 5 " vN"Nr'" f" C
1X,21l",7ovtlv,sot2r2t'i1gannecr1vi'tf, an extremely efficient D m l LO D dis!“ y, "
device for use in battery and load management _
applications. G I 3 4 S
The TSOP-6 package with its customized Ieadframe Top View TSOP-6
produces a HEXFET© power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDs(on)
reduction enables acurrent-handiing increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -20 V
In @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -4.0
In @ TA = 70°C Continuous Drain Current, Vas @ -4.5V -3.3 A
IDM Pulsed Drain Currenk0 -16.5
PD @TA = 25°C Maximum Power Dissipation© 2.0 W
PD @TA = 70°C Maximum Power Dissipation© 1.3 W
Linear Derating Factor 0.02 W/°C
Vas Gate-to-Source Voltage 1 20 V
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient 62.5 °C/W
1
04/20/10
IRF5806PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 -- -- V VGs = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 47.1 86 m9 VGS = -4.5V, ID = M.0A ©
- 67.5 147 Ves = -2.5V, ID = -3.0A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vos = Vas, ID = -250PA
gfs Forward Transconductance 6.4 - - S Vos = -10V, ID = -4.0A
loss Drain-to-Source Leakage Current - - -15 pA l/rss = -16V, Vss = 0V
- - -25 V93 = -16V, l/ss = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
Qg Total Gate Charge - 8.3 11.4 ID = -4.0A
QgS Gate-to-Source Charge - 1.2 - nC I/cs = -16V
di Gate-to-Drain ("Miller") Charge - 2.6 - l/ss = -4.5V
tdmn) Turn-On Delay Time - 6.2 9.3 VDD = -10V, VGS = -4.5V
t, Rise Time - 27 41 ns ID = -1.0A
1d(off) Turn-Off Delay Time - 94 140 Rs = 6.0Q
tf Fall Time - 126 190 RD = 109 C)
Ciss Input Capacitance - 594 - Vas = 0V
Coss Output Capacitance - 114 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 87 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current - - -16 5 A integral reverse G
(Body Diode) (D . p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.0A, VGS = 0V ©
trr Reverse Recovery Time - 116 174 ns To = 25°C, IF = -2.0A
er Reverse Recovery Charge - 90 135 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
(3 When mounted on 1 inch square Copper board, ts 10sec.
