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IRF5805TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
TOR Rectifier
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
Description
These P-channel MOSFETsfrom International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit providesthe designerwith an extremely efficient
device for use in battery and load management
PD -95340A
llRF5805PbF
HEXFET6 Power MOSFET
Voss RDS(on) max ID
-3ov 0.098@sz = -101/ -3.8A
0.165@sz = -4.5v -3.0A
applications. G E 3 4 S
The TSOP-6 package with its customized leadframe Top View TSOP-6
produces a HEXFET6 power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is ata premium. It's uniquethermal design and RDS(on)
reduction enables acurrent-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -30 V
In @ TA = 25°C Continuous Drain Current, Vas @ -10V -3.8
In @ TA = 70°C Continuous Drain Current, Vas @ -10V -3.0 A
IDM Pulsed Drain Currenk0 -15
PD @TA = 25°C Maximum Power Dissipation© 2 W
PD @TA = 70°C Maximum Power Dissipation© 1.28 W
Linear Derating Factor 0.02 W/°C
Vas Gate-to-Source Voltage 1 20 V
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient 62.5 °C/W
1
04/20/10
|RF5805PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 -- -- V VGs = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - O.098 Q VGS = -10V, ID = -3.8A ©
- - 0.165 l/ss = -4.5V, ID = -3.0A ©
VGS(th) Gate Threshold Voltage -1.0 - -2.5 V Vos = VGS, ID = -250PA
gfs Forward Transconductance 3.5 - - S Vos = -10V, ID = -3.8A
loss Drain-to-Source Leakage Current - - -15 PA l/rss = -24V, Vss = 0V
- - -25 V93 = -24V, l/ss = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 Vas = 20V
Qg Total Gate Charge - 11 17 ID = -3.8A
QgS Gate-to-Source Charge - 2.3 - nC I/cs = -15V
di Gate-to-Drain ("Miller") Charge - 1.5 - l/ss = -10V
tdmn) Turn-On Delay Time - 11 17 VDD = -15V, VGS = -10V
t, Rise Time - 14 21 ns ID = -1.0A
1d(off) Turn-Off Delay Time - 90 135 Rs = 6.0Q
tf Fall Time - 49 74 RD = 159 C)
Ciss Input Capacitance - 511 - Vas = 0V
Coss Output Capacitance - 79 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 50 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -15 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.0A, VGS = 0V ©
trr Reverse Recovery Time - 19 29 ns To = 25°C, IF = -2.0A
er Reverse Recovery Charge - 16 24 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
(3 Surface mounted on 1 in square Cu board, t S 10sec.
