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IRF5804
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
International
Tait Rectifier
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Description
These P-channel HEXFET6 Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This beneht provides the designer
with an extremely efficient device for use in battery and
PD - 94333A
IRF5804
HEXFET© Power MOSFET
Voss RDS(on) max (m9) ID
-40V 198@Vss = -10V -2.5A
334@Vss = -4.51/ -2.0A
DE- -6 D
DEJ LED
load management applications. G I 3 4 s
The TSOP-6 package with its customized leadframe . TSOP 6
produces a HEXFET© power MOSFET with RDSM) Top View -
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -2.5
ID @ TA-- 70°C Continuous Drain Current, Vss @ -10V -2.0 A
IDM Pulsed Drain Current CO -10
Pro @TA = 25°C Power Dissipation © 2.0 W
Po @TA = 70°C Power Dissipation © 1.3
Linear Derating Factor 0.016 mW/°C
l/ss Gate-to-Source Voltage * 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 62.5 'C/W
1
1/13/03
IRF5804 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V VGs = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.03 - V/°C Reference to 25°C, ID = -1mA
. . . - - 198 Vss = -10V, ID = -2.5 ©
R Static Drain-to-Source On-Resistance
DS(on) - - 334 mn Vss = -4.5v. ID = -2.0A ©
VGS(1h) Gate Threshold Voltage -1.0 - -3.0 V I/os = Kas, ID = -250pA
gfs Forward Transconductance 2.5 - - S Vos = -10V, ID = -2.5A
loss Drain-to-Source Leakage Current - - -10 PA Vos = -32V, VGS = 0V
- - -25 Vos = -32V, VGS = 0V, TJ = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Vss = 20V
% Total Gate Charge - 5.7 8.5 ID = -2.5A
Qgs Gate-to-Source Charge - 2.8 4.2 nC I/os = -20V
di Gate-to-Drain ("Miller") Charge - 2.1 3.2 VGS = -10V
tdon) Turn-On Delay Time - 19 - VDD = -20V co
tr Rise Time - 430 - ns ID = -1.0A
tam“) Turn-Off Delay Time - 100 - Rs = 6.09
tf Fall Time - 64 - VGs = -10V
Ciss Input Capacitance - 680 - VGS = 0V
Coss Output Capacitance - 60 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 44 - f = 1kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 10 integral reverse G
(Body Diode) OD - - p-n junction diode. s
Vsro Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.0A, VGS = 0V ©
tn Reverse Recovery Time - 24 36 ns Tu = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 32 49 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width f 400ps; duty cycle LC 2%.
2
