IRF5801TRPBF ,200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters 200V 2.2 0.6ABenefits Low Gate ..
IRF5803 ,-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageapplications.34G SThe TSOP-6 package with its customized leadframeTSOP-6®Top Viewproduces a HEXFE ..
IRF5803D2 ,-40V FETKYElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRF5803D2PBF , FETKY ®MOSFET & Schottky Diode
IRF5803D2TR ,-40V FETKYApplications A K P-Channel HEXFET3 6R = 112mΩS D DS(on) Low V Schottky RectifierF45G D SO-8 F ..
IRF5803D2TRPBF ,-40V FETKYapplications.The SO-8 has been modified through a customizedSO-8leadframe for enhanced thermal char ..
IS62LV1024LL-70H , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-70H , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-70QI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV12816BLL-55BI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816BLL-55TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816BLL-70TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IRF5801TRPBF
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD-95474B
International
. . IRF5801 PbF
TOR. Rectifier SMPS MOSFET
HEXFET® Power MOSFET
Applications VDSS RDS(on) max ID
q High frequency DC-DC converters
200V 2.29 0.6A
Benefits
0 Low Gate to Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including D 1 - - - 6 D
Effective Coss to Simplify Design, (See j L _l7Rsiji','i, .
App. Note AN1001) D 2 5 D J,C'jii'i: 3/,-
o Fully Characterized Avalanche Voltage <
and Current G 3 4 S
o Lead-Free TSOP-6
o Halogen-Free
Absolute Maximum Ratings
Parameter Max. Units
ID © TA = 25°C Continuous Drain Current, Vas © 10V 0.6
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 0.48 A
IDM Pulsed Drain Current C) 4.8
PD @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
Vas Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 9.6 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
RQJA Junction-to-Ambient © - 62.5 °C/W
Notes co through © are on page 8
1
04/20/1 0
IRF58ty1PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 200 - - V Vss = 0V, ID = 250pA
AWBmDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - V/°C Reference to 25°C, ID = 1 mA ©
Roam) Static Drain-to-Source On-Resistance - - 2.2 Q l/ss = 10V, ID = 0.36A ©
Vegan) Gate Threshold Voltage 3.0 - 5.5 V VDS = Vas, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 200V, Vas = 0V
- - 250 Vos = 160V, Vas = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Dynamic tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 0.44 - - S Vos = 50V, ID = 0.36A
% Total Gate Charge - 3.9 - ID = 0.36A
095 Gate-to-Source Charge - 0.8 - nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 2.2 - Vas = 10V
tri(on) Turn-On Delay Time - 6.5 - VDD = 100V
t, Rise Time - 8.0 - ns ID = 0.36A
tum) Turn-Off Delay Time - 8.8 - Re = 539
ff Fall Time - 19 - Vas = 10V ©
Ciss Input Capacitance - 88 - l/ss = 0V
Coss Output Capacitance - 18 - Vos = 25V
Crss Reverse Transfer Capacitance - 6.3 - pF f = 1.0MHz
Cogs Output Capacitance - 102 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 8.4 - Vss = 0V, VDS = 160V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 26 - Vas = 0V, Vos = 0V to 160V co
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 9.9 mJ
IAR Avalanche CurrentCD - 0.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 1 8 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse (3
(Body Diode) (D - - 4.8 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 0.36A, Vss = 0V ©
trr Reverse Recovery Time - 45 - ns TJ = 25°C, IF = 0.36A
G, Reverse RecoveryCharge - 54 - nC di/dt = 100A/ps ©
2
