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IRF5800TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD - 96029A
International
TOR Rectifier IR 5800PbF
HEXFET® Power MOSFET
o Ultra Low On-Resistance 1 6
o P-Channel MOSFET D ' ' D
VDSS = -30V
q Surface Mount D 2 H 5
0 Available in Tape & Reel m I' I D
q Low Gate Charge 3 4
o Lead-Free GE s RDS(on) = 0.08552
q Halo en-Free
g Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET© power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's uniquethermal design and RDs(on) reduction TSOP-6
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -4.0
ID @ TA-- 70°C Continuous Drain Current, VGs @ -4.5V -3.2 A
IDM Pulsed Drain Current (D -32
Po @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
EAs Single Pulse Avalanche Energy© 20.6 mJ
Vas Gate-to-Source Voltage 1 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-Ambient® 62.5 °CNV
1
04/20/10
IRF5800PbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(ngss Drain-to-Source Breakdown Voltage -30 - - V Vss = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0085 Q Vas = -10V, ID = -4.0A ©
- - 0.150 Vas = -4.5V, ID = -3.0A co
Vesah) Gate Threshold Voltage -1.0 - - V Vos = I/ss, ID = -250pA
gfs Forward Transconductance 3.5 - - S Vos = -10V, ID = -4.0A
loss Drain-to-Source Leakage Current : : lf, PA x: : ”:3 x2: : g, TJ = 70°C
less Gate-to-Source Forward Leakage - - -100 n A l/ss = -20V
Gate-to-Source Reverse Leakage - -- 100 VGS = 20V
09 Total Gate Charge - 11.4 17 ID = -4.0A
Qgs Gate-to-Source Charge - 2.3 - nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 2.2 - l/ss = -10V ©
td(an) Turn-On Delay Time - 11.4 17 VDD = -15V, Vss = -10V
t, Rise Time - 11 17 ns ID = -1.0A
td(off) Turn-Off Delay Time - 24 36 Rs = 6.09
tf Fall Time - 14 20 RD = 159, ©
Ciss Input Capacitance - 535 - Vss = 0V
Cass Output Capacitance - 94 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 68 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 A showing the
ISM Pulsed Source Current - - -32 integral reverse e
(Body Diode) OD p-n junction diode. s
l/so Diode Forward Voltage - - -1.2 V TJ = 25°C, IS = -2.0A, Vss = 0V (D
trr Reverse Recovery Time - 19 28 ns TJ = 25°C, IF = -2.0A
Qrr Reverse Recovery Charge - 16 24 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © Surface mounted on FR-4 board, ts Ssec.
max. junction temperature. .
© Starting T; = 25°C, L = 2.5mH
© Pulse width f 300ps; duty cycle 5 2%. Re = 259, has = -4.OA. (See Fig 10 )
2
