IRF540S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF540Z ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures®HEXFET Power MOSFET● Advanced Process TechnologyD● Ultra Low On-ResistanceV = 100V● 175°C ..
IRF540ZPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications, DS®this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extre ..
IRF540ZS ,100V Single N-Channel HEXFET Power MOSFET in a D2Pak packageapplications.IRF540ZIRF540ZS IRF540ZLAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain C ..
IRF541 ,N-Channel Power MOSFETs/ 27 A/ 60-100VI _ -- "" - A - --B-. _.---..- - - -u. - - _ ----- ---- _ -
FAIRCHILD SEMICONDUCTOR at; 'iiiiIsc ..
IRF542 ,N-Channel Power MOSFETs/ 27 A/ 60-100VElectrical Characteristics (T c --. 25°C unless otherwise noted)
Symbol l Characteristic Min Max U ..
IS62LV1024L-55T , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-55TI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-70QI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-70TI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-55HI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024LL-55Q , 128K x 8 LOW POWER AND LOW Vcc
IRF540S
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
llrtterrtatityrtal
Bae Rectifier
HEXFET® Power MOSFET
0 Surface Mount .
0 Available in Tape8 Reel
0 Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
Fast Switching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.898
lRF540S
VDSS re: 100V
RDS(on) = 0.0779
ID = 28A
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
Io @ Tc = 25°C Continuous Drain Current, I/ss @ 10 / 28
ID @ Tc = 100°C Continuous Drain Current, Ves © 10 V 20 A
IDM Pulsed Drain Current C) 110
Pro @ To = 25°C Power Dissipation 150 W
PD © TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 1.0 W PC
Linear Derating Factor (PCB Mount)" 0.025
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 230 mJ
IAR Avalanche Current co 28 A
EAR Repetitive Avalanche Energy 5) 15 md
dv/dt Peak Diode Recovery dv/dt © 5.5 N/ns
To, Tsro Junction and Storage Temperature Range -55 to +175 0 C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) J
Thermal Resistance
_ Parameter Min. Typ. Max. Units
ROJC Junction-to-Case --...- - 1 .0
Ram Junction-to-Ambient (PCB mount)" - - 40 °C/W
l Ram Junction-to-Ambient - - 62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF54OS
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 100 - - V l/tis-UN, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.13 - V/°C Reference to 25°C. In: 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.077 n VGS=10V, 10:17A ©
Vsam) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vas, b--- 25011A
gfs Forward Transconductance 8.7 - - S Vos=50V, b=17A ©
loss Drain-to-Source Leakage Current - - 25 pA VDS=1OOV' VGS=OV
- ---. 250 VDs=80V, I/arc-UN, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss--20V
Gate-to-Source Reverse Leakage -....- - -100 1/as=-20V
09 Total Gate Charge - - 72 ID=17A
Qgs Gate-to-Sou rce Charge - - 11 " Vos=80V
(Aw Gate-to-Drain (''Miller") Charge -- - 32 VGs=10V See Fig. 6 and 13 C4)
td(on) Turn-On Delay Time - 11 - Vro--50V
tr Rise Time - 44 - ns Io=17A
td(on) Tu rn-Off Delay Time - 53 - Re=9.1Q
tr Fall Time - 43 - RD=2.QQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 'tr1v1etl2'sfnd,') D
nH from package iiii)
Ls Internal Sou rce Inductance - 7.5 - Ind center df
die contact s
Ciss Input Capacitance - 1700 - Var=OV
Coss Output Capacitance - 560 - pF Vos=25V
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is gonéinggu: E)Source Current - - 28 NLOSFEIhsymboI bd D _
o y k) e _ s owmg e "
ISM Pulsed Source Current - - 1 10 A integral reverse tiii-li-j)
(Body Diode) (O p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V Tr--25''C, Is=28A, Vss=OV Cf
trr Reverse Recovery Time - 180 360 ns Tu=25oC/lF---17A
G, Reverse Recovery Charge - 1.3 2.8 wc dildt=100AIps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+lar)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD--25V, starting TJ=25°C, L=44011H
He=25§2, IAS--28A (See Figure 12)
C3) ISDSZBA, di/dtf170A/ps, VDDSV(BR)Dss,
TJST 75°C
co Pulse width f. 300 ps; duty cycle 32%.
