IRF540NSPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IRF540NSTRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because ofits low internal connection resistance and can dissipate up2D Pak TO-262to 2 ..
IRF540NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF540PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF540S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF540Z ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageFeatures®HEXFET Power MOSFET● Advanced Process TechnologyD● Ultra Low On-ResistanceV = 100V● 175°C ..
IS62LV1024L-45HI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-45T , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-45TI , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-55H , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-55Q , 128K x 8 LOW POWER AND LOW Vcc
IS62LV1024L-55T , 128K x 8 LOW POWER AND LOW Vcc
IRF540NS-IRF540NSPBF-IRF540NSTRL
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
:raRliUctifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Advanced HEXFETO Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
PD - 91342B
IRF540NS
IRF540NL
HEXFET® Power MOSFET
Voss = 100V
A RDS(on) = 44mQ
ID = 33A
ti;iiiiiiit Rj'.
to 2.0W in a typical surface mount application. szak TO-262
The through-hole version (IRF540NL) is available for Iow- IRF540NS IRF540NL
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V © 33
ID © To = 100°C Continuous Drain Current, Vas @ 10V co 23 A
IDM Pulsed Drain Current 0M0 110
PD @Tc = 25°C Power Dissipation 130 W
Linear Derating Factor 0.87 W/°C
Ves Gate-to-Source Voltage t 20 V
IAR Avalanche CurrentCD 16 A
EAR Repetitive Avalanche Energy© 13 mJ
dv/dt Peak Diode Recovery dv/dt ©© 7.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf'in (1 .1N'm)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.15 °CNV
ReJA Junction-to-Ambient (PCB mount)" - 40
1
07/01/05
IRF540NS/lRF540NL.
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Veg = 0V, ID = 250pA
AV
RDs(on) Static Drain-to-Source On-Resistance - - 44 m9 I/ss = 10V, ID = 16A (D
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = l/tss, ID = 250PA
gfs Forward Transconductance 21 - - S Vros = 50V, ID = 16AC90D
loss Drain-to-Source Leakage Current -- --.- 25 pA Vros = 100V, VGS = 0V
- - 250 Vos = 80V, Vas = 0V, TJ = 150°C
lass Gate-to-Source Forward Leakage - - 100 n A Ves = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
% Total Gate Charge - - 71 ID = 16A
095 Gate-to-Source Charge - - 14 nC VDs = 80V
di Gate-to-Drain ("Miller") Charge - - 21 VGS = 10V, See Fig. 6 and 13 COO
tam) Turn-On Delay Time - 11 - VDD = 50V
t, Rise Time - 35 - ns ID = 16A
td(off) Turn-Off Delay Time - 39 - Rs = 5.19
tf Fall Time - 35 - Vss = 10V, See Fig. 10 ©OD
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 1960 - l/ss = 0V
COSS Output Capacitance - 250 - Vos = 25V
Crss Reverse Transfer Capacitance - 4O - pF f = 1.0MHz, See Fig. 5 ©
EAS Single Pulse Avalanche Energy©© - 700© 185© mJ IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 33 .
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 110 p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 16A, Vas = 0V ©
trr Reverse Recovery Time - 115 170 ns TJ = 25°C, IF = 16A
G, Reverse Recovery Charge - 505 760 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
G) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting To = 25°C, L =1.5mH
Rs = 259, IAS-- 16A. (See Figure 12)
© ISO S 16A, di/dt S 340A/ps, VDD S V(BR)ross,
T J 3 175°C
© Pulse width 3 400ps; duty cycle 5 2%.
© This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to TJ = 175°C .
© Uses IRF540N data and test conditions.
"When mounted on I" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
