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IRF540N -IRF540N.-IRF540NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRIectifier
PD - 91341B
IRF540N
HEXFET© Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
VDSS = 100V
RDS(on) = 44mf2
ID = 33A
Advanced HEXFETO Power MOSFETs from International
Rectiher utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in awide variety ofapplications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter
ID @ TC = 25°C
Continuous Drain Current, l/ss @ 10V
ID @ Tc = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current (O
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche CurrentC)
Repetitive Avalanche Energy©
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
IO lbf-in (1 .1N-m)
Thermal Res
istance
Parameter
Typ. Max.
Junction-to-Case
- 1.15
Case-to-Sink, Flat, Greased Surface
0.50 -
Junction-to-Ambient
03/13/01
IRF540N
International
TO.R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.12 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 44 mn VGS = 10V, ID = 16A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = I/ss, ID = 250PA
gfs Forward Transconductance 21 - - S Vos = 50V, ID = 16A@
loss Drain-to-Source Leakage Current - - 25 pA Ws = 100V, VGS = 0V
- - 250 Vrss = 80V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 71 ID = 16A
Qgs Gate-to-Source Charge - - 14 nC l/os = 80V
di Gate-to-Drain ("Miller") Charge - - 21 VGS = 10V, See Fig. 6 and 13
tam) Turn-On Delay Time - 11 - VDD = 50V
tr Rise Time - 35 - ns ID = 16A
tam) Turn-Off Delay Time - 39 - Rs = 5.19
tf Fall Time - 35 - Vss = 10V, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
cm Input Capacitance - 1960 - VGS = 0V
Coss Output Capacitance - 250 - Vos = 25V
Crss Reverse Transfer Capacitance - 40 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 700S 185© mJ IAS = 16A, L = 1.5mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 33 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ - 110 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25''C, ls = 16A, VGS = 0V ©
trr Reverse Recovery Time - 115 170 ns To = 25°C, IF = 16A
G, Reverse Recovery Charge - 505 760 nC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Rr 11)
© Starting TJ = 25°C, L =1.5mH
Rs = 25f2, IAS = 16A. (See Figure 12)
© Iso S 16A, di/dt S MOA/ps, VDD S V(BR)DSSv
T J 3 175°C
© Pulse width 3 400ps; duty cycle S 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
