IRF530NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF530NSTRLPBF-IRF530NSTRRPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
Tait Rectifier
PD - 95100
llRF530NSPbF
IRF530NLPbF
HEXFET6 Power MOSFET
0 Advanced Process Technology D
0 Ultra Low On-Resistance VDSS = 100V
0 Dynamic dv/dt Rating
0 175°C Operating Temperature " RDS(on) = 90mQ
q Fast Switching G
0 Fully Avalanche Rated ID = 17A
q Lead-Free s
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power . £3- sg),
MOSFETs are well known for, provides the designer with an extremely . 'S‘ZfC 'Rirrt' 's
efficient and reliable device for use in a wide variety of applications. V}, u,. Css .
The D2Pak is a surface mount power package capable of accommodating t .
die sizes up to HEX-4. It provides the highest power capability and the 2
. . . . . D Pak TO-ge
lowest possible on-resistance In any existing surface mount package. The
D2Pak is suitable for high current applications because of its low internal IRF530NSPbF IRF530NLPbF
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (I RF530NL) is available for Iow-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas © 10V © 17
ID © To = 100°C Continuous Drain Current, Vss © 10V co 12 A
IDM Pulsed Drain Current COC) 60
Po @TA = 25°C Power Dissipation 3.8 W
PD ©Tc = 25°C Power Dissipation 70 W
Linear Derating Factor 0.47 W/°C
Vss Gate-to-Source Voltage t 20 V
IAR Avalanche CurrentC) 9.0 A
EAR Repetitive Avalanche Energy© 7.0 mJ
dv/dt Peak Diode Recovery dv/dt C90D 7.4 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Flax: Junction-to-Case - 2.15 o C AN
ReJA Junction-to-Ambient (PCB Mounted,steady-state)** - 4O
1
03/10/04
|RF530NS/LPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 -- -- V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 90 m9 Vas = 10V, ID = 9.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 250pA
gfs Forward Transconductance 12 - - S Vos = 50V, ID = 9.0A3MO
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, Vas = 0V
- - 250 VDs = 80V, Vss = 0V, To = 150°C
lsss Gate-to-Source Forward Leakage - -- 100 n A Viss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Qg Total Gate Charge - - 37 ID = 9.0A
Qgs Gate-to-Source Charge - - 7.2 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 11 Vss = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 9.2 - VDD = 50V
t, Rise Time - 22 - ns ID = 9.0A
td(oit) Turn-Off Delay Time - 35 - Rs = 129
tt Fall Time - 25 - Vas = 10V, See Fig. 10 COO)
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) (ir; )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact s
Ciss Input Capacitance - 920 - Vas = 0V
Coss Output Capacitance - 130 - Vos = 25V
Crss Reverse Transfer Capacitance - 19 - pF f = 1.0MHz, See Fig. 5 co
EAS Single Pulse Avalanche Energy©© - 340© 93© mJ 'As = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse G
(Body Diode)C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 9.0A, VGS = 0V GD
trr Reverse Recovery Time - 93 140 ns TJ = 25°C, IF = 9.0A
G, Reverse Recovery Charge - 320 480 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
G) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting Tu = 25°C, L = 2.3mH
Ra = 259, IAS = 9.0A, Vas=10V (See Figure 12)
© Iso S 9.0A, di/dt S 410A/ps, VDD S V(BR)DSS!
T J 3 175°C
69 Pulse width S 400ps; duty cycle S 2%.
© This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to Tu = 175°C .
C) Uses IRF530N data and test conditions.
"When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
