IRF530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91352BIRF530NSIRF530NL®HEXFET Power MOSFET Advanced Process TechnologyDV = 100V Ultra Low On ..
IRF530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91352BIRF530NSIRF530NL®HEXFET Power MOSFET Advanced Process TechnologyDV = 100V Ultra Low On ..
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IRF530NSTRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF530NL-IRF530NL.-IRF530NS-IRF530NSTRL-IRF530NS-TRR
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 91352B
riterryti.c.o,ryol IRF53ONS
Tait Rectifier IRF530NL
HEXFET6 Power MOSFET
0 Advanced Process Technology D
0 Ultra Low On-Resistance VDss = 100V
o Dynamic dv/dt Rating
0 175°C Operating Temperature . " Rrosion) = 90mf2
q Fast Switching G
0 Fully Avalanche Rated ID = 17A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast _
switching speed and ruggedized device design that HEXFET power _ _ 1fiit
MOSFETs are well known for, provides the designer with an extremely I . '. :64: \¢' V
efficient and reliable device for use in a wide variety of applications. A' , V ', vs,,'"-,,.
The D2Pak is a surface mount power package capable of accommodating IC
die sizes up to HEX-4. It provides the highest power capability and the D2P k TO 262
lowest possible on-resistance in any existing surface mount package. The a -
D2Pak is suitable for high current applications because of its low internal IRF530NS IRF530NL
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for Iow-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, l/ss © 10V co 17
ID @ Tc = 100°C Continuous Drain Current, Vss © 10V co 12 A
km, Pulsed Drain Current COO) 60
pr, @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 70 W
Linear Derating Factor 0.47 W/°C
VGS Gate-to-Source Voltage * 20 V
IAR Avalanche CurrentC) 9.0 A
EAR Repetitive Avalanche Energy© 7.0 mJ
dv/dt Peak Diode Recovery dv/dt C90D 7.4 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.15 o C AN
ReJA Junction-to-Ambient (PCB Mounted,steady-state)** - 40
1
09/04/02
IRF530NS/lRF530NL.
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA ©
Roswn) Static Drain-to-Source On-Resistance - - 90 mf2 Vas = 10V, lo = 9.0A ©
Vesah) Gate Threshold Voltage 2.0 - 4.0 V Vros = Was, ID = 250pA
ge, Forward Transconductance 12 - - S Vos = 50V, lo = 9.0A©©
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, Vss = 0V
- - 250 Vos = 80V, Vss = 0V, To = 150°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
th Total Gate Charge - - 37 ID = 9.0A
Q95 Gate-to-Source Charge - - 7.2 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 11 Vss = 10V, See Fig. 6 and 13 co
trs(on) Turn-On Delay Time - 9.2 - Vroro = 50V
t, Rise Time - 22 - ns ID = 9.0A
td(off) Turn-Off Delay Time - 35 - Rs = 12n
t, Fall Time - 25 - Ves = 10V, See Fig. 10 COO)
u, Internal Drain Inductance - 4.5 - Between Isad, D
nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 920 - Vss = 0V
Coss Output Capacitance - 130 - Vos = 25V
Crss Reverse Transfer Capacitance - 19 - pF f = 1.0MHz, See Fig. 5 co
EAS Single Pulse Avalanche Energy©© - 340© 93© mJ IAS = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)C) - - 60 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 9.0A, VGS = 0V ©
trr Reverse Recovery Time - 93 140 ns TJ = 25°C, IF = 9.0A
G, Reverse Recovery Charge - 320 480 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
G) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting Tu = 25°C, L = 2.3mH
Rs = 259, IAS = 9.0A, VGS=10V (See Figure 12)
© Iso S 9.0A, di/dt S 41 OA/ps, VDD S V(BR)DSS!
T J f 175°C
© Pulse width S 400ps; duty cycle 5 2%.
S This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to Tu = 175°C .
C) Uses IRF530N data and test conditions.
"When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
