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IRF530N-IRF530NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
araRRectifier
PD - 91351
IRF530N
H EXFET© Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
VDSS = 100V
RDS(on) = 90mf2
ID = 17A
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely emcient
and reliable device for use in a wide variety ofapplications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 17
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current co 60
Po @Tc = 25°C Power Dissipation 70 W
Linear Derating Factor 0.47 W/“C
VGS Gate-to-Source Voltage i 20 V
IAR Avalanche CurrentC) 9.0 A
EAR Repetitive Avalanche Energy© 7.0 mJ
dv/dt Peak Diode Recovery dv/dt © 7.4 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 2.15
Rocs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
ReJA Junction-to-Ambient - 62
3/16/01
IRF530N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25''C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 90 mn VGS = 10V, ID = 9.0A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = Was, ID = 250pA
9ts Forward Transconductance 12 - - S VDS = 50V, ID = 9.0A@
loss Drain-to-Source Leakage Current - - 25 pA I/os = 100V, VGS = 0V
- - 250 VDs = 80V, VGS = ov, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 37 ID = 9.0A
Qgs Gate-to-Source Charge - - 7.2 nC VDs = 80V
di Gate-to-Drain ("Miller") Charge - - 11 V65 = 10V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 9.2 - VDD = 50V
tr Rise Time - 22 - ns ID = 9.0A
td(off) Turn-Off Delay Time - 35 - Rs = 12n
t, Fall Time - 25 - VGS = 10V, See Fig. 10 (4)
. Between lead, D
u, Internal Drain Inductance - 4.5 - .
nH 6mm (0.25m) _,il'/-l-" )
from package G
Ls Internal Source Inductance - 7.5 - . _
and center of die contact s
Ciss Input Capacitance - 920 - VGs = 0V
C055 Output Capacitance - 130 - Vros = 25V
Crss Reverse Transfer Capacitance - 19 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 340S 93© mJ IAS = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 9.0A, VGS = 0V ©
trr Reverse Recovery Time - 93 140 ns TJ = 25°C, IF = 9.0A
G, Reverse Recovery Charge - 320 480 nC di/dt = 100/Ups co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
C) Starting To = 25°C, L = 2.3mH
RG = 259, MS = 9.0A, VGS=1OV (See Figure 12)
© ISD S 9.0A, di/dt S 410Alps, VDD S V(BR)DSS:
T J f 175°C
© Pulse width f 400ps; duty cycle S 2%.
S This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
