IRF530L ,Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF530N ,22A, 100V, 0.064 Ohm, N-Channel, Power MOSFETPD - 91351IRF530N®HEXFET Power MOSFETl Advanced Process TechnologyDV = 100Vl Ultra Low On-Resistanc ..
IRF530NL ,100V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF530NL. ,100V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.2The D Pak is a surface mount power package capable of accommodatingdie sizes up to HE ..
IRF530NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91352BIRF530NSIRF530NL®HEXFET Power MOSFET Advanced Process TechnologyDV = 100V Ultra Low On ..
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IRF530L
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
International
152R Rectifier
Description
Fifth Generation HEXFETs from International RectifIerutilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efhcient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
Advanced Process Technology
Surface Mount (IRF530NS)
Low-profile through-hole (IRF530NL)
175°C Operating Temperature
Fast Switching G
Fully Avalanche Rated
PD - 91352A
IRF530NS/L
HEXFET® Power MOSFET
VDSS =100V
rn RDS(on) = 0.119
s ID = 17A
possible on-resistance in any existing surface mount package. The D2Pak is 02Pak T0462
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF530NL) is available for low-prohle applications.
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, VGs @ 10V© 17
ID @ Tc = 100°C Continuous Drain Current, l/ss @ 10V© 12 A
IDM Pulsed Drain Current (MD 60
PD @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy©© 150 mJ
IAR Avalanche Current-9.0 A
EAR Repetitive Avalanche Energy(0 7.9 mJ
dv/dt Peak Diode Recovery dv/dt ©S 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .9 o
ReJA Junction-to-Ambient ( PCB Mounted,steady-state)*‘ - 40 CM,
1
5/13/98
IRF530NS/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)D33 Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250PA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coemcient - 0.12 - V/''C Reference to 25°C, ID = 1mAC9
Rom”) Static Drain-to-Source On-Resistance - - 0.11 Q VGS = 10V, ID = 9.0A GD
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = I/ss, ID = 250pA
gfs Forward Transconductance 6.4 - - S Vos = 50V, ID = 9.0AS
Kass Drain-to-Source Leakage Current _- _- 22550 pA VS: , ggS/VVZ:S=_03VTJ = 150°C
Gate-to-Source Forward Leakage - - 100 VGS = 20V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -20V
% Total Gate Charge - - 44 ID = 9.0A
Qgs Gate-to-Source Charge - - 6.2 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 21 VGS = 10V, See Fig. 6 and 13 ©S
tum) Turn-On Delay Time - 6.4 - I/oo = 50V
tr Rise Time - 27 - ID = 9.0A
tum Turn-Off Delay Time - 37 - ns Rs = 12n
tf Fall Time - 25 - RD = 5.59, See Fig. 10 3DS
Ls Internal Source Inductance - 7.5 - nH 1tC,','d,r,hie contact
Ciss Input Capacitance - 640 - VGS = 0V
Cass Output Capacitance - 160 - pF Vros = 25V
Crss Reverse Transfer Capacitance - 88 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse G
(Body Diode) cos p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 9.0A, VGS = 0V ©
trr Reverse Recovery Time - 130 190 ns To = 25°C, IF = 9.0A
G, Reverse Recovery Charge - 650 970 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 3.1mH
Rs = 25W, IAS = 9.0A. (See Figure 12)
© Iso f 9.0A, di/dt f 180/Ups, VDD S V(BR)DSS,
TJ s: 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
© Pulse width 3 300ps; duty cycle S 2%.
© Uses IRF530N data and test conditions
