IRF5305SPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.
Absolute Maximum Ratings
HEXFET© Power MOSFET
VDSS = -55V
"i , RDS(on) = ..
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IRF530L ,Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)applications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF5305SPBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
Tart, Rectifier
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewell known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
Lead-Free
Advanced Process Technology
Surface Mount (IRF5305S)
Low-profile through-hole (IRF5305L)
175°C Operating Temperature
Fast Switching
P-Channel
a Fully Avalanche Rated
PD - 95957
IRF5305S/LPbF
HEXFET© Power MOSFET
VDSS = -55V
RDS(on) = 0.069
|D=-31A
accommodating die sizes up to HEX-4. It provides the
Jii;iiir,)
highest power capability and the lowest possible on- DzPak T0-262
resistance in any existing surface mount package. The
D2Pak is suitable for high currentapplications because of
its low internal connection resistance and can dissipate
upto 2.0W in a typical surface mount application.
The throug h-hole version (I RF5305L) is available tor low-
profileappiications.
Absolute Maximum Ratings
Parameter Max. Units
ID © TC = 25°C Continuous Drain Current, Ves tp -101/S -31
ID © TC = 100''C Continuous Drain Current, Vss tp -10VS -22 A
IDM Pulsed Drain Current cos -110
PD tpr, = 25°C Power Dissipation 3.8 W
PD@TC = 25''C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
l/ss Gate-to-Source Voltage , 20 V
EPs Single Pulse Avalanche EnergyOS 280 ml
Ips; Avalanche CurrentC0 -16 A
EAR Repetitive Avalanche EnergyG) 11 m]
dv/dt Peak Diode Recovery dv/dt ss -5.8 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1.4 0
Ras; Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 CM,
4/21/05
IRF5305S/LPbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V Veg = OV, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoefMient - -0.034 - I/fC Reference to 25''C, b =-1mACs)
RDS(0n) Static Drain-to-Source On-Resistance - - 0.06 n Veg = -10V, ID = -16A 6)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Ws = l/ss, ID = -250UA
gts Forward Transconductance 8.0 - - S Ws = -25V, ID = -16AS
bss Drain-toSource Leakage Current - - -25 " VDS = -55V, I/ss = 0V
- - -250 Ws = -44V, Veg = ov, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Veg = 20V
Gate-to-Source Reverse Leakage - - -100 Veg = -20V
09 Total Gate Charge - - 63 ID = -16A
Qgs Gate-to-Source Charge - - 13 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 29 Veg = -10V, See Fig. 6 and 13 ©Cs)
tam) Turn-On Delay Time - 14 - VDD = -28V
t, Rise Time - 66 - ns ID = -16A
td(off) Tu rn-Off Delay Time - 39 - Rs = 6.89
t, FalITime - 63 - Rn =1.69,See Fig. 10 ©©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Css Input Capacitance - 1200 - Ws = 0V
Coss Output Capacitance - 520 - pF VDS = -25V
Cas Reverse Transfer Capacitance - 250 - f = 1.0MHz. See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
b Continuous Source Current MOSFETsymbol D
(Body Diode) - - -31 A showing the
ISM Pulsed Source Current integral reverse C)
(Body Diode) Ci) - - -110 p-n junction diode. S
Va, Diode Forward Voltage - - -1.3 V Tu = 25°C, IS = -16A, I/ss = 0V ©
trr Reverse Recovery Time - 71 110 ns TJ = 25°C, I; = -16A
er Reverse Recovery Charge - 170 250 nC di/dt = -100A/ps ©S
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating: pulse width limited by G) Pulse width I 300ps; duty cycle I 2%.
max. junction temperature. ( See fig. 11 )
© VDD = -25V, Starting Tu-- 25°C, L = 2.1mH Cs) Uses IRF5305 data and test conditions
Rs = 259. IAS = -16A. (See Figure 12)
© ISO I -16A, di/dt s -280A/ps, I/co S V(BR)DSS.
Tu f 175°C
Ah When mounted on l" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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