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IRF520N
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
PD - 91339A
IRF520N
HEXFET© Power MOSFET
VDSS = 100V
A RDS(on) = 0.20n
ID = 9.7A
1jia'.-),ci: ('sjifsfisi.di-r-i-l
. . . TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGs @ 10V 9.7
ID @ Tc = 100°C Continuous Drain Current, l/ss @ 10V 6.8 A
IDM Pulsed Drain Current C) 38
PD @Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage 1 20 V
EAs Single Pulse Avalanche Energy© 91 mJ
IAR Avalanche Current© 5.7 A
EAR Repetitive Avalanche Energy0) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 3.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
ReJA Junction-to-Ambient - 62
5/13/98
IRF520N
International
IEZR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - Vl°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 0.20 Q I/cs = 10V, ID = 5.7A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V l/os = VGS, ID = 250pA
gts FonNard Transconductance 2.7 - - S Vros = 50V, ID = 5.7A
loss Drain-to-Source Leakage Current - - 25 pA Vros = 100V, VGS = 0V
- - 250 I/rss = 80V, Vss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Veg = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
% Total Gate Charge - - 25 lo = 5.7A
Qgs Gate-to-Source Charge - - 4.8 nC Ws = 80V
di Gate-to-Drain ("Miller") Charge - - 11 V63 = 10V, See Fig. 6 and 13 ©
tdion) Turn-On Delay Time - 4.5 - VDD = 50V
tr Rise Time - 23 - ns ID = 5.7A
td(off) Turn-Off Delay Time - 32 - Rs = 22n
t, Fall Time - 23 - RD = 8.69, See Fig. 10 ©
u, Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) Q )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 330 - l/ss = 0V
Coss Output Capacitance - 92 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 9.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) Ci) - - 38 p-n junction diode. s
V39 Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 5.7A, VGS = 0V ©
trr Reverse Recovery Time - 99 150 ns To = 25°C, IF = 5.7A
Qrr Reverse RecoveryCharge - 390 580 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See rig. 11 )
© N/oo = 25V, starting To = 25''C, L = 4.7mH
Rs = 259, IAs = 5.7A. (See Figure 12)
ms 175°C
© ISD S 5.7A, di/dt S 240A/ps, VDD S V(BR)DSS'
© Pulse width 3 300ps; duty cycle s: 2%.
