IRF520. ,9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Featuresapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF520FI ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitIRF520 IRF520FIV Drain-source Voltage (V =0) 100 ..
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IRF520-IRF520.
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
[International]
BSR Rectifier
PD-9.313K
IRF520
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 175°C Operating Temperature
o FastSwitching
o Ease of Paralleling
o Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
S ID=92A
RDS(OH) 1"dlr. 0.279
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, Vas @ 10 V 9.2
In @ To Tr. 100°C Continuous Drain Current, Vas a 10 V 6.5 A
IDM _ Pulsed Drain Current 0) 37
Pp @ To = 25°C Power Dissipation 60 W
Linear Derating Factor 0.40 WPC
Vos Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 200 ml
IAR Avalanche Current (i) 9.2 A
EAR Repetitive Avalanche Energy' Ci) 6.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range “0
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
I Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 tGm)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redo Junction-to-Case - - 2.5
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - _ °C/W
ReJA Junction-to-Ambient - - 62
IRF520
Electrical Characteristics tii) TJ 'd'l1 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas=OV, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.13 - VPC Reference to 25°C, In: 1mA
Roam) Static Drain-to-Source On-Resistance - -- 0.27 n VGs=10V, ID=5.5A (ii)
Vtssim) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vas, lo: 250PA
grs Forward Transconductance 2.7 - - S VDs=50V, 10:5.5A C4)
. - -- 25 Vos=100V, VGs=OV
loss Drain-to-Source Leakage Current - _ 250 WA VDs=80V, Ves=0V, TJ=150°C
lass Gate-to-Source Forward Leakage - - 100 n A 1/er=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch Total Gate Charge -- - 16 ID=9.2A
Qgs Gate-to-Source Charge - - 4.4 I Vos=80V
di Gate-to-Drain ("Miller") Charge - - 7.7 Ves=1OV See Fig. 6 and 13 (4C)
tum) Turn-On Delay Time - 8.8 - Voo=50V
tr Rise Time - 30 - n s lo=9.2A
td(olf) Tu rn-Off Delay Time - 19 - He=18§2
t, Fall Time - 2O - RD=5.2Q See Figure 10 co
Lo Internal Drain Inductance - 4.5 - t',tt'ieilll'i)f.') (iii')
nH from package G
Ls Internal Source Inductance - 7.5 - Ind center bf
die contact SI
Ciss Input Capacitance - 360 - Vas=OV
Coss Output Capacitance -.... 150 __..-.. pF VDs=25V
Crss Reverse Transfer Capacitance - 34 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
ls Continuous Source Current - - 9 2 MOSFET symbol D
(Body Diode) . A showing the 'si)
ISM Pulsed Source Current _ - 37 integral reverse G L_L
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, Is=9.2A, VGs=0V (ii)
trr Reverse Recovery Time - 110 260 ns TJ=25°C, IF=9.2A
Q" Reverse Recovery Charge - 0.53 1.3 wc dildt=100A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=3.5mH
RG=2SQ, lAs=9.2A (See Figure 12)
© 13039.2A, di/dts;110A/ps, VDDSWBRmss,
TJS175°C
© Pulse width f 300 us; duty cycle 32%.
