IRF510A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSSn Avalanche Rugged TechnologyR = 0.4 ΩDS(on) n Rugged Gate Oxide Techn ..
IRF510S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF510SPBF , HEXFET Power MOSFET
IRF511 ,N-Channel Power MOSFETs/ 5.5 A/ 60-100VElectrical Characteristics (Tc---- 25°C unless otherwise noted)
Symbol Characteristic f Min Max ..
IRF511 ,N-Channel Power MOSFETs/ 5.5 A/ 60-100VElectrical Characteristics (Tc---- 25°C unless otherwise noted)
Symbol Characteristic f Min Max ..
IRF512 ,N-Channel Power MOSFETs/ 5.5 A/ 60-100Vapplications,
such as switching power supplies, converters, AC and DC
motor controls, relay and s ..
IS62C1024-70W , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL-35QI , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024AL-35TI , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35Q , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35QI , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35T , 128K x 8 LOW POWER CMOS STATIC RAM
IRF510A
N-CHANNEL POWER MOSFET
IRF510A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 μA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.)
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum RatingsRev. B1
