IRF4905PBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1280CIRF4905®HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceV = - ..
IRF4905S ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF4905SPBF , HEXFET Power MOSFET
IRF4905STRL ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1478AIRF4905S/L®HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF4905S)V ..
IRF4905STRLPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF4905LPbFIRF4905SPbFGD SGate Drain SourceAbsolute Maximum RatingsParameter Max. Unit ..
IRF4905STRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures HEXFET Power MOSFETO Advanced Process TechnologyDO Ultra Low On-ResistanceV = -55VDSSO 150 ..
IS62C1024-45QI , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45TI , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45W , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45W , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55Q , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-55QI , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IRF4905-IRF4905..-IRF4905PBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
PD - 9.1280C
IRF4905
HEXFET® Power MOSFET
0 Advanced Process Technology D
o Ultra Lew On-Resietance VDSS = -55V
o Dynamic dv/dt Rating
: I1:75 C Qpetatlng Temperature RDS(0n) = 0.02Q
ast Switching G
o P-Channel
o Fully Avalanche Rated s k, - -74A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power s, Ci)
MOSFETs are well known for, rovides the desi ner
with an extremely efficient and feliable device forguse (t):siiji!j,!dii'sii--s
in a wide variety of applications. r/'s''rk''"s'
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal TO-220AB
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, I/ss @ -10V -74
ID @ Tc = 100°C Continuous Drain Current, Ves @ -10V -52 A
IDM Pulsed Drain Current co -260
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 930 ml
IAR Avalanche CurrentCD -38 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - 'C/W
ReJA Junction-to-Ambient - 62
8/25/97
IRF4905
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefrcient - -0.05 - V/°C Reference to 25°C, ID = -1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.02 f2 VGs = -10V, ID = -38A 60
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 21 - - S VDs = -25V, ID = -38A
loss Drain-to-Source Leakage Current - - -25 pA l/os = -55V, VGS = 0V
- - -250 Vos = -44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 180 ID = -38A
Qgs Gate-to-Source Charge - - 32 nC VDS = -44V
di Gate-to-Drain ("Miller") Charge - - 86 VGS = -10V, See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 18 - VDD = -28V
tr Rise Time - 99 - ns ID = -38A
tum) Turn-Off Delay Time - 61 - R3 = 2.59
tf Fall Time - 96 - RD = 0.729, See Fig. 10 C4)
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) Gil/tj-) )
Ls Internal Source Inductance - 7 5 - from package
. and center of die contact s
Ciss Input Capacitance - 3400 - VGs = 0V
Coss Output Capacitance - 1400 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 640 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -74 MOSFET symbol D
(Body Diode) A showing the 'r-,,-,,
ISM Pulsed Source Current integral reverse G m“
(Body Diode) C) - - -260 p-n junction diode. s
Vso Diode Forward Voltage - - -1.6 V To = 25°C, Is = -38A, VGs = 0V ©
trr Reverse Recovery Time - 89 130 ns T J = 25°C, IF = -38A
Qrr Reverse RecoveryCharge - 230 350 PC di/dt = -100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
CD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
C) Starting To-- 25°C, L = 1.3mH
Rs = 259, IAS = -38A. (See Figure 12)
TJs 175°C
© ISD f -38A, di/dt s -270A/ps, l/DD s V(BR)DSS,
© Pulse width f 300ps; duty cycle f 2%.
