IRF460 ,500V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
IRF4905 ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1280CIRF4905®HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceV = - ..
IRF4905.. ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IRF4905L ,-55V Single P-Channel HEXFET Power MOSFET in a TO-262 packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IRF4905PBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1280CIRF4905®HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceV = - ..
IRF4905S ,-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IS623 , OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC
IS62C1024-35Q , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-35QI , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-35T , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-35W , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45QI , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IRF460
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
International
IEZR Rectifier
REPE I I I I V E AVALANCHE AND dV/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part N umber BVDSS RDS(on) m
IRF460 500V 0.279 21
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
PD -90467
IRF460
500V, N-CHANNEL
tr:--"-';;))
verse energy and diode recovery dv/dt capability. TO'3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. ll Repetitive Avalanche Ratings
They are well suited for applications such as switching © Dynamlc dv/dt Rating
power supplies, motor controls, inverters, choppers, audio I: Hermetically Sealed
amplifiers and high energy pulse circuits. ll Simple Drive Requirements
ll Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 21
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 14 A
IDM Pulsed Drain Current C) 84
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 1200 m1
IAR Avalanche Current Cf) 21 A
EAR Repetitive Avalanche Energy co 30 m.)
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5(typical) g
For footnotes refer to the last page
1
01/24/01
IRF460 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.78 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.27 VGS = 10V, ID = 14A co
Resistance - - 0.31 VGS = 10V, ID =21A CD
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 13 - - S (V) VDS > 15V, IDS = 14A ©
IDSS Zero Gate Voltage Drain Current - - 25 VDS=400V,VGS=0V
- - 250 HA VDS =400v
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGs=20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS = -20V
Qg Total Gate Charge 84 - 190 VGS = 10V, 1D=21A
Qgs Gate-to-Source Charge 12 - 27 nC VDS = 250V
Qgd Gate-to-Drain ('Miller') Charge 60 - 135
td(on) Turn-On Delay Time - - 3 5 VDD =250V, ID =21A,
tr Rise Time - - 120 RG =2.35f2
tti(om Turn-Off Delay Time - - 130 n S
tf Fall Time - - 98
LS + LD Total Inductance - 6. 1 - nH Measured from drain lead (6mm/0.251n. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 4300 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 1000 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 250 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 21 A
ISM Pulse Source Current (Body Diode) C) - - 84
VSD Diode Forward Voltage - - 1.8 V Tj = 25°C, IS = 21A, VGS = 0V co
trr Reverse Recovery Time - - 580 nS Tj = 25°C, IF = 21A, di/dt S 100A/ys
QRR Reverse Recovery Charge - - 8. 1 0C VDD S 50V ©
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 0.42 'C/W
RthJ A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
