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IRF4104-IRF4104S
40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package
PD - 94639A
International IRF4104
. . AUTOMOTIVE MOSFET
TOR RGCTHLIGF IRF4104S
IRF4104L
Features HEXFET® Power MOSFET
. Advanced Process Technology
. Ultra Low On-Resistance D
o 175°C Operating Temperature VDSS = 40V
o Fast Switching
o Repetitive Avalanche Allowed up to Tjmax . A RDS(on) = 5.5mf2
Description
Specifically designed for Automotive applications, s ID = 75A
this HEXFETO Power MOSFET utilizes the latest
processingtechniques to achieve extremelylowon-
resistance per silicon area. Additional features of
thisdesign area175°Cjunctionoperatingtempera- n 'i'liii),h
ture, fast switching speed and improved repetitive "tiii _
avalanche rating . These features combine to make 'ss, l _
this design an extremely efficient and reliable device .
for use in Automotive applications and awide variety
. . TO-220AB D2Pak TO-262
of other TItalien' . IRF4104 IRF4104S IRF4104L
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss © 10V (Silicon Limited) 120
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 84 A
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Package limited 75
IBM Pulsed Drain Current CO 470
PD @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 W/''C
VGs Gate-to-Source Voltage , 20 V
EAS (Thermallylimited) Single Pulse Avalanche Energy© 120 mJ
E AS (Tested ) Smgle Pulse Avalanche Energy Tested Value © 220
IAR Avalanche Current C) See Fig.12a, 12b, 15, 16 A
EAR Repetltlve Avalanche Energy C9 m J
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw © 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.05 "C/W
Rocs Case-to-Sink, Flat Greased Surface (D 0.50 -
ROJA Junction-to-Ambient © - 62
ROJA Junction-to-Ambient (PCB Mount) - 40
1
8/29/03
|RF4104S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.3 5.5 mn VG.s = 10V, ID = 75A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGS, ID = 250pA
gfs Forward Transconductance 63 - - V Vos = 10V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, VGS = 0V
- - 250 Vos = 40V, vGS = 0v, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
09 Total Gate Charge - 68 100 ID = 75A
As Gate-to-Source Charge - 21 - nC Vos = 32V
an Gate-to-Drain ("Miller") Charge - 27 - VGS = 10V ©
td(on) Turn-On Delay Time - 16 - VDD = 20V
t, Rise Time - 130 - ID = 75A
tmom Turn-Off Delay Time - 38 - ns Rs = 6.8 Q
tf Fall Time - 77 - VGS = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 3000 - VGS = ov
cu, Output Capacitance - 660 - I/os = 25V
Crss Reverse Transfer Capacitance - 380 - pF f = 1.0MHz
Cass Output Capacitance - 2160 - Vss = 0V, I/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 560 - VGS = 0V, I/os = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 850 - VGS = 0V, Vos = 0V to 32V (9
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 470 integral reverse G E
(Body Diode) C) p-n junction diode. a
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 75A, VGS = 0V ©
trr Reverse Recovery Time - 23 35 ns T J = 25°C, IF = 75A, Va, = 20V
Qrr Reverse Recovery Charge - 6.8 10 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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