IRF4000TR ,100V Quad N-Channel HEXFET Power MOSFET in a Power MLP package IRF4000HEXFET Power MOSFET
IRF4104 ,40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB packageapplications.IRF4104IRF4104S IRF4104LAbsolute Maximum RatingsParameter Max. Units(Silicon Limited)I ..
IRF4104PBF ,40V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.2TO-220ABD Pak TO-262IRF4104PbFIRF4104SPbF IRF4104LPbFAbsolute Maximum RatingsParamete ..
IRF4104S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET● Advanced Process TechnologyD● Ultra Low On-ResistanceV = 40V● 175°C O ..
IRF4104SPBF , HEXFET® Power MOSFET
IRF420 ,N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 VElectrical Characteristics (TC= 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit Te ..
IS61WV12816DBLL-10TLI , 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLS-25TLI , 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV3216BLL-12TLI , 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV3216BLL-12TLI , 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61WV51216BLL-10TLI , 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV5128BLL-10KLI , 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IRF4000-IRF4000TR
100V Quad N-Channel HEXFET Power MOSFET in a Power MLP package
International
a:aRliuctifier
PD - 97056
lRF4000
HEXFET® Power MOSFET
Applications
q IEEE 802.3af Compliant PoE Switch
in Power Sourcing Equipment
Voss RDS(on) max ID
100V 270mQ@VGS = 12V 2 4A
350mQ@VGS = 10V I
Features
0 Exceeds IEEE 802.3af PoE
requirements
. Rugged planartechnologywithlarge
0 Very Low Leakage at 100V (1 .5uA max)
0 Fully characterized avalanche voltage
and current
. Thermallyenhanced
D1 D2 D3 D4
G1 S1 G2 S2 G3 S3 G4 S4
0 Saves space: replaces 4 discrete
MOSFETs
5mm x 10mm Power MLP
IRF4000 ISOMETRIC
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 100 V
Ves Gate-to-Source Voltage * 30
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 2.4 A
ID @ TA = 70°C Continuous Drain Current, Vss © 10V 1.9
IDM Pulsed Drain Current C) 19
PD @TA = 25°C Maximum Power Dissipation 3.5 W
Linear Derating Factor 0.028 W/°C
dv/dt Peak Diode Recovery dv/dt 8.6 V/ns
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 1.5 °C/W
ROJA Junction-to-Ambient (PCB Mount) (CE) - 36
Notes C) through s are on page 7
1
10/07/05
International
IRF4000
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, lo = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.19 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - 230 270 mf2 Vas = 12V, b = 2.4A ©
- 270 350 Vas = 10v, b = 2.4A ©
VGS(th) Gate Threshold Voltage 3.5 - 5.7 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.5 pA VDS = 100V, Vss = 0V
- - 10 VDS = 80V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 30V
Gate-to-Source Reverse Leakage -- - -1OO Vss = -30V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 1.6 - - S Vos = 25V, ID = 1.4A
09 Total Gate Charge - 9.4 14 ID = 1.4A
Qgs Gate-to-Source Charge - 2.8 4.2 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 4.5 6.8 I/as = 10V s
fawn) Turn-On Delay Time - 8.7 - VDD = 50V
tr Rise Time - 1.5 - ID =1.4A
td(ott) Turn-Off Delay Time - 13 - ns Ra = 6.29
t, Fall Time - 6.1 - Vas = 10V ©
Ciss Input Capacitance - 330 - Vss = 0V
Coss Output Capacitance -.-_ 77 ___ VDS = 25V
Crss Reverse Transfer Capacitance -- 18 -- pF f = 1.0MHz
Coss Output Capacitance -- 410 -- Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 45 -- Vss = OV, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 89 - l/ss = 0V, Vos = 0V to 80V
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 8.7 mJ
bu, Avalanche Current LO _ 1.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.2 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 19 integral reverse G
(Body Diode) Ci) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 1.4A, VGS = 0V ©
trr Reverse Recovery Time - 67 100 ns TJ = 25°C, IF = 1.4A, VDD = 25V
Qrr Reverse Recovery Charge - 180 270 no di/dt = 100A/ps (3)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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