IRF3808STRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Standard PackBase Part NumberPackage Type Orderable Part NumberForm QuantityIRF3808LP ..
IRF4000 ,100V Quad N-Channel HEXFET Power MOSFET in a Power MLP packageFeatures Exceeds IEEE 802.3af PoE
IRF3808STRLPBF
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
lRF-3808SPbF
|RF-3808LPbF
Typical Applications
. Industrial Motor Drive
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating G
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TImax
HEXFET® Power MOSFET
VDSS = 75V
RDS(on) = 0.0079
ID =106A
o Lead-Free
Description
This Advanced Planar Stripe HEXFET © Power MOSFET
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, low R0JC, fast switching
14, (6;
speed and improved repetitive avalanche rating. This D2Pak TO-262
. . . . . IRF3808SPbF IRF3808LPbF
combination makes the design an extremely efficient and
reliable choice for use in a wide variety of applications.
Base Part Number Package Type F,,',',,','""'''"' Pack Quantity Orderable Part Number
IRF3808LPbF T0-262 Tube 50 IRF3808LPbF
Tube 50 IRF3808SPbF
IRF3808SPbF DzPak Tape and Reel Left 800 IRF3808STRLPbF
Tape and Reel Right 800 FF3808STRRPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 106
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 75 A
IDM Pulsed Drain Current (D 550
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vas Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy© 430 mJ
IAR Avalanche Current© 82 A
EAR Repetitive Avalanche Energy© See Fig.12a, 12b, 15, 16 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range oC
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.75 "C/W
RNA Junction-to-Ambient (PCB Mounted, Steady State)© - 40
- © 2013 International Rectifier Submit Datasheet Feedback
November 01,2013
IttiiR,
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.086 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 5.9 7.0 m9 Vss = 10V, ID = 82A (9
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gts Forward Transconductance 100 - - S Vos = 25V, ID = 82A
loss Drain-to-Source Leakage Current - - 20 pA Vros = 75V, l/ss = 0V
- - 250 Vos = 60V, I/as = 0V, Tu = 150°C
lass Gate-to-Source Forward Leakage - - 200 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -2OO VGS = -20V
% Total Gate Charge - 150 220 ID = 82A
Qgs Gate-to-Source Charge - 31 47 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 50 76 Vss = 10V©
tdwn) Turn-On Delay Time ._- 16 -- VDD = 38V
tr Rise Time - 140 - ns ID = 82A
td(off) Turn-Off Delay Time - 68 - Rs = 2.59
1f Fall Time - 120 - VGS =10V ©
u, Internal Drain Inductance - 4.5 - Between Pd: D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance __- 7.5 --.- .
and center of die contact s
Ciss Input Capacitance - 5310 - l/ss = 0V
CDSS Output Capacitance - 890 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6010 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Cogs Output Capacitance - 570 - Vss = 0V, VDs = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1140 - Ves = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 106 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 550 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 82A, Vss = 0V G)
trr Reverse Recovery Time - 93 140 ns To = 25°C, IF = 82A
Qrr Reverse RecoveryCharge - 340 510 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by s Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. II). as Coss while Vos is rising from 0 to 80% Voss .
© Starting TJ = 25°C, L = 0.130mH © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
Rs = 259, lAs = 82A. (See Figure 12). avalanche performance.
C3) ' S 82A, di/dt S 310A/ps, VDD S V(BR)DSSa © When mounted on 1" square PCB ( FR-4 or G-10 Material ).
TJ f 175°C For recommended footprint and soldering techniques refer to
(ii) Pulse width S 400us; duty cycle S 2%. application note #AN-994.
© 2013 International Rectifier Submit Datasheet Feedback November 01,2013
