IRF3808S ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF3808STRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Standard PackBase Part NumberPackage Type Orderable Part NumberForm QuantityIRF3808LP ..
IRF4000 ,100V Quad N-Channel HEXFET Power MOSFET in a Power MLP packageFeatures Exceeds IEEE 802.3af PoE
IRF3808S
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94338A
IRF3808S
RF3808L
HEXFET® Power MOSFET
International
TOR Rectifier
Typical Applications
. Integrated StarterAIternator
o 42 Volts Automotive Electrical Systems
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating G
175°C Operating Temperature
Fast Switching
o Repetitive Avalanche Allowed up to TImax
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET © Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°Cjunction operating temperature, low R00C, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide D2Pak TO-262
variety of other applications. IRF3808S IRF3808L
AUTOMOTIVE MOSFET
VDSS = 75V
A RDS(on) = 0.007n
ID = 106A©
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 106©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 75© A
IDM Pulsed Drain Current co 550
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 Wl°C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 430 mJ
IAR Avalanche Currentc0 82 A
EAR Repetitive Avalanche Energy© See Fig.12a, 12b, 15, 16 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 0.75 "C/W
ReJA Junction-to-Ambient (PCB Mounted, Steady State)" - 40
HEXFET(R) is a registered trademark of International Rectifier.
03/08/02
IRF3808S/lRF3808L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.086 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 5.9 7.0 m9 Was = 10V, ID = 82A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 100 - - S Vos = 25V, ID = 82A
loss Drain-to-Source Leakage Current - - 20 pA Ws = 75V, VGS = 0V
- - 250 Ws = 60V, VGs = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Q, Total Gate Charge - 150 220 ID = 82A
Qgs Gate-to-Source Charge - 31 47 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 50 76 VGS = 10V©
tuom Turn-On Delay Time - 16 - VDD = 38V
tr Rise Time - 140 - ns In = 82A
td(off) Turn-Off Delay Time - 68 - Rs = 2.59
t, Fall Time - 120 - VGS = 10V G)
u, Internal Drain Inductance - 4.5 - Between Igad, D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 5310 - VGS = 0V
Coss Output Capacitance - 890 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6010 - VGs = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 570 - Vss = 0V, Vros = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance S - 1140 - I/ss = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 106© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 550 p-n junction diode. s
va, Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 82A, N/ss = 0V GD
trr Reverse Recovery Time - 93 140 ns T: = 25''C, IF = 82A
Qrr Reverse RecoveryCharge - 340 510 nC di/dt = 100A/ps @
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
6) Coss eff. is a fixed capacitance that gives the same charging time
co Repetitive rating; pulse width limited by
max. junction temperature. (See Ftg. 11).
© Starting To = 25''C, L = 0.130mH
Rs = 250, IAS-- 82A. (See Figure 12).
© la, S 82A, di/dt S 310A/ps, VDDS V(BR)ross,
TJs 175°C
as Cass while N/rss is rising from 0 to 80% Voss .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
© Limited by Tuma, , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
** When mounted on I" square PCB ( FR-4 or G-10 Material ).
© Pulse width S 400ps; duty cycle I 2%.
For recommended footprint and soldering techniques refer to
application note #AN-994.
