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IRF3805S
AUTOMOTIVE MOSFET
PD - 95880
International
" ifi AUTOMOTIVE MOSFET lRF3805
TOR ReCTI Ier FF3805S
lRF3805L
Features HEXFET® Power MOSFET
. Advanced Process Technology
0 Ultra Low On-Resistance D
. 175°C Operating Temperature Voss = 55V
. Fast Switching
o Repetitive Avalanche Allowed up to ijax G " A RDS(on) = 33mg
Description
Specifically designed for Automotive applications, s ID = 75A
this HEXFET® Power MOSFET utilizes the latest
processingtechniquesto achieve extremelylowon-
resistance per silicon area. Additional features of
this design area175°Cjunction operating tempera- t, (i4i5 (fiii.i.iit (i))
ture, fast switching speed and improved repetitive Neiri) \.. \Jgf‘f Rte
avalanche rating .These features combineto make "s, ", . ". Vt
this design an extremely efficientand reliabledevice . l,
for use in Automotive applications and a wide variety TO-220AB D2Pak TO-262
of other applications. IRF3805 IRF3805S IRF3805L
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 220
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 160 A
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Package limited) 75
IDM Pulsed Drain Current C) 890
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 2.2 W/°C
VGs Gate-to-Source Voltage 1 20 V
EAS (Thermallylimited) Single Pulse Avalanche Energy© 730 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value co 940
|AR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw C) 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
F1OJC Junction-to-Case - 0.45 °C/W
Rocs Case-to-Sink, Flat Greased Surface (D 0.50 -
ROJA Junction-to-Ambient © - 62
ROJA Junction-to-Ambient (PCB Mount) - 40
1
10/21/04
IRF3805/S/ L
International
IEER Rectifier
Electrical Characteristics tt To = 25''G (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRDSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.051 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.6 3.3 mn Ves = 10V, ID = 75A ©
Vesnh) Gate Threshold Voltage 2.0 - 4.0 V Vos = Ves, ID = 250pA
gfs Forward Transconductance 75 - - V Vos = 25V, ID = 75A
IDSS Drain-to-Source Leakage Current - - 20 pA Vos = 55V, Vss = 0V
- - 250 Vos = 55V, Ves = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -200 I/ss = -20V
a, Total Gate Charge - 190 290 ID = 75A
As Gate-to-Source Charge - 52 - nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - 72 - Vas = 10V 6)
td(on) Turn-On Delay Time - 150 - VDD = 28V
t, Rise Time - 20 - ID = 75A
tom) Turn-Off Delay Time - 93 - ns Rs = 2.6 Q
t, Fall Time - 87 - I/ss = 10V ©
u, Internal Drain Inductance -- 4.5 -- Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 7960 - Vss = 0V
Coss Output Capacitance - 1260 - VDS = 25V
Crss Reverse Transfer Capacitance - 630 - pF f = 1.0MHz
Coss Output Capacitance - 4400 - l/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 980 - VGS = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1550 - Vss = 0V, Vos = 0V to 44V Co
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - -- 75 MOSFET symbol A D
(Body Diode) A showing the " Lt
ISM Pulsed Source Current - - 890 integral reverse G E
(Body Diode) co p-n junction diode. V e
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, IS = 75A, l/ss = 0V ©
trr Reverse Recovery Time - 36 54 ns T J = 25°C, IF = 75A, VDD = 28V
Qrr Reverse Recovery Charge - 47 71 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
