IRF3805LPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageFeatures®
IRF3805LPBF-IRF3805SPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 97046A
International
" . . IRF3805PbF
TOR Rectifier IRF3805SPbF
Features IRF3805LPbF
o Advanced Process Technology HEXFET® Power MOSFET
q Ultra Low On-Resistance D
o 175°C Operating Temperature
q Fast Switching VDSS = 55V
q Repetitive Avalanche Allowed up to Tjmax
o Lead-Free G - A RDS(on) = 3.3mQ
Description
This HEXFETO PowerMOSFET utilizesthelatest s ID = 75A
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved t, v'1tiaiiih 'et',';:),
repetitive avalancherating.Thesefeaturescombine "tii(cf N, \Jgf-{E
to make this design an extremely efficient and ‘\ 3 . x
reliable device for use in a wide variety of . l,
applications.
TO-22OAB D2Pak TO-262
IRF3805PbF IRF3805SPbF IRF3805LPbF
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 210
ID © To = 100°C Continuous Drain Current, l/ss @ 10V (Silicon Limited) 150 A
ID © To = 25°C Continuous Drain Current, I/ss © 10V (Package limited) 75
IDM Pulsed Drain Current (D 890
PD @TC = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS (Thermallylimiled) Single Pulse Avalanche Energy© 650 mJ
EAs (Tested ) Single Pulse Avalanche Energy Tested Value © 940
|AR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw co 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case © - 0.5 Cr)) °C/W
Recs Case-to-Sink, Flat Greased Surface (D 0.50 -
RNA Junction-to-Ambient ©© - 62
RNA Junction-to-Ambient (PCB Mount) ©© - 40
1
07/23/10
IRF3805/S/LPbF
International
TOR Rectifier
Electrical Characteristics @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.051 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.6 3.3 mn Vss = 10V, ID = 75A ©
VGSUh) Gate Threshold Voltage 2.0 - 4.0 V Vos = Ves, ID = 250pA
gfs Forward Transconductance 75 - - V VDs = 25V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 PA l/rs = 55V, Vss = 0V
-- - 250 Vos = 55V, l/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Veg = 20V
Gate-to-Source Reverse Leakage - - -2OO Vss = -20V
q, Total Gate Charge - 190 290 lo = 75A
Qgs Gate-to-Source Charge - 52 - nC I/os = 44V
di Gate-to-Drain ("Miller") Charge - 72 - Vss = 10V ©
td(on) Turn-On Delay Time -- 150 - Vor, = 28V
t, Rise Time - 20 - ID = 75A
tom Turn-Off Delay Time - 93 - ns Ra = 2.6 Q
t, Fall Time -- 87 -- Ves = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) GE )
Ls Internal Source Inductance -- 7.5 -- from package
and center of die contact S
Ciss Input Capacitance - 7960 - VGS = 0V
Coss Output Capacitance -- 1260 -- VDS = 25V
Crss Reverse Transfer Capacitance - 630 - pF f = 1.0MHz
Coss Output Capacitance - 4400 - Vas = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 980 - Vss = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 1550 - l/ss = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
IS Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the Cr,
ISM Pulsed Source Current -- -- 890 integral reverse Cl :3;
(Body Diode) CO p-n junction diode. R
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 75A, Vas = 0V ©
tr, Reverse Recovery Time -- 36 54 ns T J = 25°C, IF = 75A, l/oo = 28V
Qrr Reverse Recovery Charge - 47 71 nC di/dt = 100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
