IRF3717TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Synchronous MOSFET for Notebook4.4m @V = 10VProcessor Power 20V ..
IRF3805LPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageFeatures®
IRF3717TRPBF
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95719
International
TOR Rectifier |RF3717PbF
HEXFETO Power MOSFET
Applications
VDss RDS(on) max ID
o Synchronous MOSFET for Notebook
Processor Power 20V 4.4mQ@VGS = 10V 20A
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
q Lead-Free s m1 ,8 D
s m2 H 7:111 D
. s m3 f [3]] D
Benefits
o Ultra-Low Gate Impedance G E ED
0 Very Low RDS(on) Top View SO-8
o Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, VGS © 10V 20
ID @ TA = 70''C Continuous Drain Current, VGS @ 10V 16 A
'DM Pulsed Drain Current (D 160
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 °C/W
ROSA Junction-to-Ambient (D - 50
Notes (D through © are on page 10
1
8/10/04
IRF37r7PbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 20 - - v l/GS = OV, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.014 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.7 4.4 mg I/ss = 10V, ID = 20A ©
- 4.8 5.7 I/ss = 4.5V, ID = 16A ©
VGS(th) Gate Threshold Voltage 1.55 2.0 2.45 V I/rss = VGS, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA N/os = 16V, VGS = 0V
- - 150 Vos = 16V, VGS = 0V, TJ = 125°C
lsss Gate-to-Source Forward Leakage - - 100 nA N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 57 - - S Vros = 10V, ID = 16A
Q9 Total Gate Charge - 22 33
0951 Pre-l/th Gate-to-Source Charge - 6.8 - Vos = 10V
Qgs2 Post-Vth Gate-to-Source Charge - 2.2 - nC VGS = 4.5V
an Gate-to-Drain Charge - 7.3 - ID = 16A
ngdr Gate Charge Overdrive - 5.7 - See Fig. 16
st Switch Charge (Qgs2 + di) - 9.5 -
Qoss Output Charge - 12 - nC I/rss = 10V, Vss = 0V
tum.) Turn-On Delay Time - 12 - I/oo = 10V, VGS = 4.5V
tr Rise Time - 14 - ID = 16A
tam) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
t, Fall Time - 6.0 -
Ciss Input Capacitance - 2890 - VGS = 0V
Cass Output Capacitance - 930 - pF VDs = 10V
Crss Reverse Transfer Capacitance - 430 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 32 m J
IAR Avalanche Current OD - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 20 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 16A, VGS = 0V ©
tn Reverse Recovery Time - 22 32 ns TJ = 25°C, IF = 16A, VDD = 10V
er Reverse Recovery Charge - 13 19 n0 di/dt = 100Alps ©
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