IRF3717 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Synchronous MOSFET for Notebook4.4m @V = 10VProcessor Power 20V ..
IRF3717TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Synchronous MOSFET for Notebook4.4m @V = 10VProcessor Power 20V ..
IRF3805LPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageFeatures®
IRF3717
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 95843
International
TOR Rectifier I RF371 7
HEXFET© Power MOSFET
Applications
Voss RDS(on) max ID
q Synchronous MOSFET for Notebook
Processor Power 20V 4.4mQ@VGs = 10V 20A
0 Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
s EED‘ ' B D
s E11212 H 7:111 D
. s m3 f 6m] D
Benefits
o Ultra-Low Gate Impedance G CED m D
0 Very Low RDS(on) Top View SO-8
q Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage * 20
ID @ T, = 25°C Continuous Drain Current, Vas @ 10V 20
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 16 A
IDM Pulsed Drain Current (D 160
PD OT, = 25°C Power Dissipation 2.5 W
PD or, = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
To Operating Junction and -55 to + 150 °C
TSTS Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Fur. Junction-to-Drain Lead - 20 °C/W
ROJA Junction-to-Ambient (D _ 50
Notes (D through (D are on page 10
1
2/20/04
|RF3717
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.014 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.7 4.4 mg Vas = 10V, ID = 20A ©
- 4.8 5.7 Vss = 4.5V, ID =16A ©
VGS(th) Gate Threshold Voltage 1.55 2.0 2.45 V Vos = Vss, ID = 250uA
AVGS(1h)/ATJ Gate Threshold Voltage Coefficient -- -5.4 -- mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 pA Vos = 16V, Vss = 0V
- - 150 Vos = 16V, Veg = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 57 - - S Vos = 10V, ID = 16A
Qg Total Gate Charge - 22 33
0951 Pre-Vth Gate-to-Source Charge - 6.8 - Vos = 10V
0952 Post-Wh Gate-to-Source Charge - 2.2 - nC Vas = 4.5V
di Gate-to-Drain Charge - 7.3 - ID = 16A
ngdr Gate Charge Overdrive - 5.7 - See Fig. 16
st Switch Charge (Q952 + di) - 9.5 -
Qoss Output Charge -- 12 -- nC Vos = 10v, Vss = ov
td(on) Turn-On Delay Time - 12 -- l/co = 10V, Ves = 4.5V
t, Rise Time - 14 --- ID = 16A
tum) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
t, Fall Time - 6.0 -
Ciss Input Capacitance - 2890 - l/ss = 0V
Coss Output Capacitance - 930 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 430 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 32 mJ
IAR Avalanche Current OD - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 20 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - -- 1.0 V TJ = 25°C, ls = 16A, VGS = 0V ©
trr Reverse Recovery Time - 22 32 ns TJ = 25°C, V = 16A, Vor, = 10V
a,, Reverse Recovery Charge - 13 19 n0 di/dt = 100A/ps ©
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