IRF3711ZPBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Proces ..
IRF3711ZS ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package IRF3711ZIRF3711ZSIRF3711ZL
IRF3717 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Synchronous MOSFET for Notebook4.4m @V = 10VProcessor Power 20V ..
IRF3717TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Synchronous MOSFET for Notebook4.4m @V = 10VProcessor Power 20V ..
IRF3805LPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageFeatures®
IRF3711ZPBF
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD -95530
lRF3711ZPbF
IRF3711ZSPbF
llRF3711ZLPbF
Applications HEXFET® Power MOSFET
o High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Clg
o Lead-Free
20V 6.0mQ 1 6nC
Benefits [ 'git: 1g)y
q Low RDS(on) at 4.5V l/ss \fi; \. "s)i'jii'vi R,e _
o Ultra-Low Gate Impedance _, . E: l,
q Fully Characterized Avalanche Voltage .
and Current TO-220AB D2Pak TO-262
IRF3711Z IRF3711ZS IRF3711ZL
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
l/tss Gate-to-Source Voltage t 20
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V 92 © A
lo @ Tc = 100°C Continuous Drain Current, l/ss @ 10V 65 ©
IDM Pulsed Drain Current co 380
PD @Tc = 25°C Maximum Power Dissipation 79 W
PD @Tc = 100°C Maximum Power Dissipation 40
Linear Derating Factor 0.53 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw © 10 lbfNn (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rom Junction-to-Case © - 1.89 "C/W
Ras Case-to-Sink, Flat Greased Surface CO 0.50 -
ROJA Junction-to-Ambient TCr) - 62
ROJA Junction-to-Ambient (PCB Mount) S© - 40
Notes OD through co are on page 12
1
7/20/04
|RF3711Z/S/LPbF
Static © Tu = 25°C (unless otherwise specified)
International
TOR ilectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.013 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.8 6.0 mn l/ss = 10V, ID = 15A ©
- 5.9 7.3 Vss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.55 2.0 2.45 V Vos = Vas, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, l/ss = 0V
- - 150 Vos-- 16V, Vas--0V,Tv= 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -1OO Vss = -20V
gfs Forward Transconductance 46 - - S Vos = 10V, ID = 12A
q, Total Gate Charge - 16 24
0951 Pre-Vth Gate-to-Source Charge -- 4.6 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge - 1.4 - nC Vas = 4.5V
di Gate-to-Drain Charge - 5.3 - ID = 12A
ngdr Gate Charge Overdrive - 4.7 -- See Fig. 16
st Switch Charge (0952 + di) - 6.7 -
Qoss Output Charge - 9.5 - nC Vos = 10V, Vas = 0V
tam) Turn-On Delay Time --.- 12 --.- Vor, = 10v, Vss = 4.5V ©
t, Rise Time - 16 - ID = 12A
td(off) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
t, Fall Time - 5.4 -
Ciss Input Capacitance - 2150 - l/ss = 0V
Cass Output Capacitance - 680 - pF Vos = 10V
Crss Reverse Transfer Capacitance -- 320 --.- f = 1.0MHz
Avalanche Characteristics
Parameter
urrent
e nergy
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 92 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 380 integral reverse G
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 12A, I/ss = 0V ©
trr Reverse Recovery Time - 16 24 ns TJ = 25°C, IF = 12A, VDD = 10V
a,, Reverse Recovery Charge - 6.0 9.0 nC di/dt = 1OOA/ps ©
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