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IRF3711Z-IRF3711ZS
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94757A
Internohqrjol IRF3711Z
TOR Rectifier lRF3711ZS
lRF3711ZL
Applications HEXFET*) Power MOSFET
o High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Qg
20V 6.0mQ 16nC
Benefits .. v'iitiiiiyt
q Low RDSWD at 4.5V VGS "tii' "-,
o Ultra-Low Gate Impedance "N, _'.,
0 Fully Characterized Avalanche Voltage .
and Current TO-220AB D2Pak TO-262
IRF3711Z IRF3711ZS IRF3711ZL
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage * 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 92 © A
lo @ TC = 100°C Continuous Drain Current, VGS @ 10V 65 ©
IDM Pulsed Drain Current co 380
Pro @Tc = 25°C Maximum Power Dissipation 79 W
PD @Tc = 100°C Maximum Power Dissipation 40
Linear Derating Factor 0.53 W/°C
To Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw © 10 lbPin (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Roc Junction-to-Case © - 1.89 "C/W
Rocs Case-to-Sink, Flat Greased Surface CO 0.50 -
ROJA Junction-to-Ambient TCr) - 62
ROJA Junction-to-Ambient (PCB Mount) S© - 40
Notes OD through co are on page 12
1
10/30/03
|RF3711Z/S/L
Static © T J = 25°C (unless otherwise specified)
International
TOR ilectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coemcient - 0.013 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.8 6.0 mn Vss = 10V, ID = 15A ©
- 5.9 7.3 Vss = 4.5V, ID = 12A ©
VGS(lh) Gate Threshold Voltage 1.55 2.0 2.45 v Vos = Tss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coetrtcient - -5.6 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, I/ss = 0V
- - 150 Vos = 16V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 46 - - S Vos = 10V, ID = 12A
A Total Gate Charge - 16 24
Qgs1 Pre-Vth Gate-to-Source Charge - 4.6 - Vos = 10V
Qgsz Post-Vth Gate-to-Source Charge - 1.4 - nC VGS = 4.5V
an Gate-to-Drain Charge - 5.3 - ID = 12A
ngdr Gate Charge Overdrive - 4.7 - See Fig. 16
st Switch Charge (Qgs2 + di) - 6.7 -
Qoss Output Charge - 9.5 - nC Vos = 10V, I/ss = OV
td(on) Turn-On Delay Time - 12 - VDD = 10V, Ves = 4.5V ©
t, Rise Time - 16 - ID = 12A
td(off) Turn-Off Delay Time - 15 - ns Clamped Inductive Load
t, Fall Time - 5.4 -
Ciss Input Capacitance - 2150 - VGS = 0V
C055 Output Capacitance - 680 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz
Avalanche Characteristics
Parameter
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 92 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 380 integral reverse G
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, ls = 12A, VGS = 0V ©
trr Reverse Recovery Time - 16 24 ns TJ = 25''C, IF = 12A, VDD = 10V
Cr, Reverse Recovery Charge - 6.0 9.0 nC di/dt = 100A/ps ©
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