IRF3711PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters w ..
IRF3711S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 94062DIRF3711SMPS MOSFETIRF3711SIRF3711L
IRF3711STRL ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters w ..
IRF3711STRLPBF ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DC Converters with Synchronous Rect ..
IRF3711STRR ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 94062DIRF3711SMPS MOSFETIRF3711SIRF3711L
IRF3711STRRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 94948IRF3711PbFSMPS MOSFETIRF3711SPbFIRF3711LPbF
IS61SP25618-133B , 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP25618-133TQ , 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP25618-150TQ , 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP6464-6PQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61SP6464-6PQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61SP6464-6PQ , 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IRF3711-IRF3711L-IRF3711PBF-IRF3711S-IRF3711STRL-IRF3711STRR
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
o High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
0 High Frequency Buck Converters for
Server Processor Power Synchronous FET
o Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
SMPS MOSFET
PD- 94062D
IRF371 1
IRF371 1S
lRF3711L
HEXFET© Power MOSFET
Voss RDS(on) max ID
20V 6.0mQ 110A6
'RS'":"
Benefits
q Ultra-Low Gate Impedance TO 220AB D2P k TO 262
. Very Low RS(.on) at 4.5V I/ss IRF3711 IRF3711S IRF3711L
a Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
l/os Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage * 20 V
In @ Tc = 25''C Continuous Drain Current, VGS @ 10V 110©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 69 A
IDM Pulsed Drain Current© 440
Po @Tc = 25°C Maximum Power Dissipation 120 W
Po @TA = 25''C Maximum Power DissipationS 3.1 W
Linear Derating Factor 0.96 W/°C
To , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 1.04
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °CNV
ReJA Junction-to-Ambient@® - 62
ReJA Junction-to-Ambient (PCB mount)S© - 40
Notes C) through co are on page 11
1
12/9/04
|RF3711/3711S/3711L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 20 - - V VGs = ov, I D = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.022 - V/°C Reference to 25°C, lo = 1mA
. . . - 4.7 6.0 VGS = 10V, ID = 15A G)
- - - Q
RDS(on) Static Drain to Source On Resistance 6.2 8.5 m VGS = 4.5V, ID = 12A ©
Vesah) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 16V, VGS = 0V o
- - 100 VDs=16V,VGs=0V,TJ= 125 C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGS = -16V
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 53 - - S Vos = 16V, ID = 30A
09 Total Gate Charge - 29 44 ID = 15A
Qgs Gate-to-Source Charge - 7.3 - nC Vros = 10V
di Gate-to-Drain ("Miller") Charge - 8.9 - VGs = 4.5V
Qoss Output Gate Charge - 33 - VGs = 0V, VDS = 10V
Rg Gate Resistance 0.3 - 2.5 Q
tdmn) Turn-On Delay Time - 12 - ns N/oo = 10V
tr Rise Time - 220 - ID = 30A
td(off) Turn-Off Delay Time - 17 - Rs = 1.832
tr Fall Time - 12 - VGs = 4.5V ©
Ciss Input Capacitance - 2980 - VGS = 0V
Coss Output Capacitance .-..- 1770 .-..- pF Vos = 10V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 460 ml
IAR Avalanche Current0) - 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 110© MOSFET symbol D
(Body Diode) - - A showing the
ISM Pulsed Source Current 440 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Fon/vard Voltage - 0.88 1.3 V TJ = 25°C, Is = 30A, VGS = 0V ©
- 0.82 - TJ = 125°C, Is = 30A, VGs = 0V ©
trr Reverse Recovery Time - 50 75 ns TJ = 25°C, IF = 16A, VR=10V
G, Reverse Recovery Charge - 61 92 nC di/dt = 100A/us ©
trr Reverse Recovery Time - 48 72 ns T: = 125°C, IF = 16A, VR=10V
Qrr Reverse Recovery Charge - 65 98 nC di/dt = 100A/ps ©
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