IRF3710ZSTRL ,Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF3710Z IRF3710ZS IRF3710ZLAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C 5 ..
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IS61SP12836-133TQ , 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-133TQ , 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP12836-166TQ , 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP25618-133B , 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP25618-133TQ , 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM
IS61SP25618-150TQ , 256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM
IRF3710ZSTRL
Leaded 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
Tart, Rectifier
Features
Advanced Process Technology
AUTOMOTIVE MOSFET
PD - 94632A
IRF3710Z
IRF3710ZS
IRF3710ZL
HEXFET© Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TImax
Description
Specifically designed forAutomotive applications,
this HEXFET6 Power MOSFET utilizes the latest
D VDSS = 100V
RDS(on) = 18mf2
ID = 59A
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures ofthis design are a175°Cjunction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
'. -V. "s,
"s,, _
@ 4cit
. . . . . TO-220AB D2Pak TO-262
tions and a wide variety of other applications. IRF371OZ IRF371OZS IRF371OZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 59 A
ID @ TC = 100°C Continuous Drain Current, Vss @ 10V (See Fig. 9) 42
IDM Pulsed Drain Current (D 240
PD @Tc = 25°C Maximum Power Dissipation 160 W
Linear Derating Factor 1.1 W/''C
VGS Gate-to-Source Voltage 1 20 V
EAs Single Pulse Avalanche Energy (Thermally Limited) © 170 ml
EAs (tested) Single Pulse Avalanche Energy Tested Value © 200
IAR Avalanche Current © See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy co m J
TJ Operating Junction and -55 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf. in (1 .1N- m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.92 °C/W
Rocs Case-to-Sink, Flat, Greased Surface 0.50 -
ROSA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 40
HEXFET® is a registered trademark of International Rectifier.
1
08/29/03
IlRF3710Z/S/L International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/GS = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 14 18 mg VGS = 10V, ID = 35A (0
VGS(m) Gate Threshold Voltage 2.0 - 4.0 V Vos = N/ss, ID = 250pA
gfs Forward Transconductance 35 - - S Vos = 50V, ID = 35A
Koss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, N/ss = 0V
- - 250 Vos = 100V, VGS = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 N/ss = -20V
q, Total Gate Charge - 82 120 no b = 35A
Qgs Gate-to-Source Charge - 19 28 Vos = 80V
qu Gate-to-Drain ("Miller") Charge - 27 40 VGS = 10V (0
tam) Turn-On Delay Time - 17 - ns VDD = 50V
t, Rise Time - 77 - ID = 35A
td(off) Turn-Off Delay Time - 41 - Rs = 6.89
if Fall Time - 56 - Vss = 10V (0
Lo Internal Drain Inductance - 4.5 - nH Between lead, - D
6mm (0.25m) (r] "
Ls Internal Source Inductance - 7.5 - from package G‘Ak/ /
and center of die contact s
Ciss Input Capacitance - 2900 - pF VGS = 0V
Coss Output Capacitance - 290 - Vos = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1130 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
Cass Output Capacitance - 170 - VGS = 0V, Ws = 80V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 280 - VGS = 0V, Vos = 0V to 80V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 59 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse G
(Body Diode) Co p-n junction diode. S
I/so Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 35A, VGS = 0V ©
trr Reverse Recovery Time - 50 75 ns To = 25°C, IF = 35A, VDD = 25V
er Reverse Recovery Charge - 100 160 nC di/dt = 100NUS ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by s Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11). as Coss while Vros is rising from 0 to 80% VDss .
© Limited by TJmax, starting Tu = 25°C, L = 0.27mH, © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
Rs = 259, lAs = 35A, VGS =10V. Part not avalanche performance.
recommended for use above this value. (D This value determined from sample failure population. 100%
co ISD 3 35A, di/dt s 380A/ps, VDD s V(BR)DSS* tested to this value in production.
Tu f 175''C. This is applied to D2Pak, when mounted on 1" square PCB
© Pulse width S 1.0ms; duty cycle S 2%. ( FR-4 or G-IO Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
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