IRF3710STRRPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF3710ZPBF ,AUTOMOTIVE MOSFETapplications,S®this HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extreme ..
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IRF3710STRRPBF
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR Rectifier
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Description
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
H EXFET8 Power MOSFET
VDSS = 100V
RDS(on) = 23mQ
ID = 57A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
t't'kt,
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4si,it
D2Pak TO-262
sizes up to HEX-4. It provides the highest power capability and the lowest IRF3710SPbF IRF3710LPbF
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for Iow-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ love 57
ID @ To = 100°C Continuous Drain Current, Vas @ 10VO) 40 A
IDM Pulsed Drain Current coco 180
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Ves Gate-to-Source Voltage * 20 V
IAR Avalanche CurrentCD 28 A
EAR Repetitive Avalanche EnergyC) 20 mJ
dv/dt Peak Diode Recovery dv/dt ©0) 5.8 V/ns
T, Operating Junction and -55 to + 175
Terra Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Fkuc Junction-to-Case - 0.75 °C/W
ROJA Junction-to-Ambient (PCB Mounted,steady-state)** - 4O
1lwww-com ©2013InternationalRectifier SubmitDatasheetFeedback November12, 2013
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Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.13 - V/°C Reference to 25°C, ID = 1mA©
Roswn) Static Drain-to-Source On-Resistance - - 23 m9 Vas = 10V, ID =28A C4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = I/ss, ID = 250PA
gfs Forward Transconductance 32 - - S Vos = 25V, ID = 28A©©
loss Drain-to-Source Leakage Current - - 25 PA Vos = 100V, Vas = 0V
- - 250 VDS = 80V, Vss = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
% Total Gate Charge - - 130 ID = 28A
Qgs Gate-to-Source Charge - - 26 n0 I/os = 80V
di Gate-to-Drain ("Miller") Charge - - 43 I/ss = 10V, See Fig. 6 and 13©
tdwn) Turn-On Delay Time - 12 - VDD = 50V
t, Rise Time - 58 - ns ID = 28A
td(oit) Turn-Off Delay Time - 45 - Rs = 2.59
tt Fall Time - 47 - Vas = 10V, See Fig. 10 (90)
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3130 - Vas = 0V
Coss Output Capacitance - 410 - VDS = 25V
Crss Reverse Transfer Capacitance - 72 - pF f = 1.0MHz, See Fig. 5©
EAS Single Pulse Avalanche Energy®® - 1060(S 280© mJ IAS = 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 57 MOSFET symbol D
(Body Diode) A showing the
IsM Pulsed Source Current - - 230 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, Is = 28A, Vas = 0V ©
trr Reverse Recovery Time - 140 220 ns TJ = 25°C, IF = 28A
a,, Reverse Recovery Charge - 670 1010 nC di/dt = 100A/ps (D
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting Tu = 25°C, L = 0.70mH, Re = 259,
las-- 28A, VGS=1OV. (See Figure 12).
S 28A, di/dt S 380A/ps, l/oo S V(BR)oss,
T J 5 175°C.
G) Pulse width S 400us; duty cycle S 2%.
© This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
C) Uses IRF3710 data and test conditions.
"When mounted on I" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
© 2013 International Rectifier Submit Datasheet Feedback November12, 2013
