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IRF3710-IRF3710.-IRF3710..-IRF3710PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRIectifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Advanced HEXFET8 Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide TO-220AB
acceptance throughout the industry.
Absolute Maximum Ratings
PD - 91309A
IRF3710
HEXFET© Power MOSFET
VDSS = 100V
ID = 57A
Parameter
Max. Units
ID @ Tc = 25°C Continuous Drain Current, l/ss @ 10V
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current (O
Pro @Tc = 25°C Power Dissipation
Linear Derating Factor
VGs Gate-to-Source Voltage
IAR Avalanche CurrentC)
EAR Repetitive Avalanche Energy©
dv/dt Peak Diode Recovery dv/dt ©
5.8 V/ns
Tu Operating Junction and
TSTG Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
IO lbf-in (1 .1N-m)
Thermal Resistance
Parameter
Typ. Max. Units
Riuc Junction-to-Case
- 0.75
R903 Case-to-Sink, Flat, Greased Surface
0.50 - °CNV
ReJA Junction-to-Ambient
01/17/02
IRF3710
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.13 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 23 mn l/ss = 10V, ID =28A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V N/os = VGs, ID = 250pA
9ts Forward Transconductance 32 - - S VDS = 25V, ID = 28A@
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, I/ss = 0V
- - 250 Vos = 80V, VGS = ov, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 130 ID = 28A
095 Gate-to-Source Charge - - 26 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 43 l/ss = 10V, See Fig. 6 and 13
tom) Turn-On Delay Time - 12 - VDD = 50V
tr Rise Time - 58 - ns lo = 28A
tam) Turn-Off Delay Time - 45 - Rs = 2.59
tf Fall Time - 47 - VGS = 10V, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25m) E )
from package G
Ls Internal Source Inductance - 7.5 - . -
and center of die contact s
Ciss Input Capacitance - 3130 - VGs = 0V
Coss Output Capacitance - 410 - Vros = 25V
Crss Reverse Transfer Capacitance - 72 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 10606] 280© mJ IAS = 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 57 MOSFET symbol D
(Body Diode) A showing the
IsM Pulsed Source Current - - 230 integral reverse G
(Body Diode)C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V To = 25°C, ls = 28A, VGS = 0V ©
trr Reverse Recovery Time - 140 220 ns To = 25°C, IF = 28A
G, Reverse Recovery Charge - 670 1010 nC di/dt = 100Alps ©
ton Fon/vard Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting To = 25''C, L = 0.70mH
© Iso S 28A, di/dt S 380Alys, VDD S V(BR)ross,
TJs175°C
CO Pulse width 3 400ps; duty cycle I 2%.
RG = 25O, I AS: 28A, VGs=10V (See Figure 12) © This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to TJ = 175°C .
