IRF3709S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 94071IRF3709SMPS MOSFETIRF3709SIRF3709L®
IRF3709STRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 95495IRF3709PbFSMPS MOSFETIRF3709SPbFIRF3709LPBF
IRF3709Z ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIRF3709ZIRF3709ZSIRF3709ZL
IRF3709ZCL ,30V Single N-Channel HEXFET Power MOSFET in a TO-262 package IRF3709ZCSIRF3709ZCL
IRF3709ZCS ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IRF3709ZPBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IS61S6432-133TQ , 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-5PQ , 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-5TQI , 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61SF6432-10PQ , 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SF6432-10TQI , 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SP12832-133TQ , 128K x 32 SYNCHRONOUS PIPELINED STATIC RAM
IRF3709-IRF3709L-IRF3709S
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
0 High Frequency Isolated DC-DC
SMPS MOSFET
PD - 94071
IRF3709
IRF3709S
IRF3709L
HEXFET© Power MOSFET
Converters with Synchronous Rectification VDSS RDSion) max ID
for Telecom and Industrial Use 30V 9.0mf2 90A©
0 High Frequency Buck Converters for
Server Processor Power Synchronous FET
q Optimized for Synchronous Buck e
Converters Including Capacitive Induced t's.'a)i,hp
Turn-on Immunity L é
Benefits
0 Ultra-Low Gate Impedance TO 220AB D2P k TO 262
. Very Low RD.s(.on) at 4.5V VGS IRF3709 IRF3709S IRF3709L
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 30 V
Vss Gate-to-Source Voltage * 20 V
In @ Tc = 25''C Continuous Drain Current, VGs © 10V 90©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 57 A
IDM Pulsed Drain CurrentC0 360
Po @Tc = 25°C Maximum Power Dissipation) 120 W
Pro @TA = 25°C Maximum Power Dissipation© 3.1 W
Linear Derating Factor 0.96 mW/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .04
Recs Case-to-Sink, Flat, Greased Surface co 0.50 - °C/W
' Junction-to-Ambient/O - 62
ReJA Junction-to-Ambient (PCB mount)© - 40
Notes co through © are on page 11
1
02/20/01
IRF3709/3709S/3709L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V N/ss = 0V, ID = 250PA
AV(BR)D$$IATJ Breakdown Voltage Temp. Coemcient - 0.029 - V/°C Reference to 25°C, ID = 1mA
R St ti D . t S O R ist - 6.4 9.0 mn VGs=10V, ID=15A ©
DS(on) a IC ran- 0- ource n- eSIs ance - 7.4 10.5 VGs = 4.5V, ID = 12A ©
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vos = Was, ID = 250pA
. - - 20 Vos = 24V, VGS = 0V
I Dra n-to-So rce Leaka e C rrent A
DSS I u g u - - 100 p N/os = 24V, VGS = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 n A N/ss = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gis Forward Transconductance 53 - - S Vos = 15V, ID = 30A
09 Total Gate Charge - 27 41 ID = 15A
Qgs Gate-to-Source Charge - 6.7 - nC Vros = 16V
qu Gate-to-Drain ("Miller") Charge - 9.7 - VGS = 5.0V ©
Qoss Output Gate Charge - 22 - VGS = 0V, Vos = 10V
Won) Turn-On Delay Time - 11 - I/oo = 15V
tr Rise Time - 171 - ns lo = 30A
tdmm Turn-Off Delay Time - 21 - Rs = 1.89
tf Fall Time - 9.2 - VGS = 4.5V ©
Ciss Input Capacitance - 2672 - VGS = 0V
Coss Output Capacitance - 1064 - pF Vros = 16V
Crss Reverse Transfer Capacitance .- 109 .- f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 382 mJ
IAR Avalanche Current© - 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 90© MOSFET symbol D
(Body Diode) - - A showing the
ISM Pulsed Source Current 360 integral reverse G
(Body Diode) C) - - p-n junction diode. s
VSD Diode Forward Voltage - 0.88 1.3 V To = 25'C, Is = 30A, VGs = 0V S
- 0.82 - To = 125°C, ls = 30A, VGs = 0V ©
tn Reverse Recovery Time - 48 72 ns To = 25°C, IF = 30A, VR=15V
Qrr Reverse Recovery Charge - 46 69 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 48 72 ns To = 125°C, IF = 30A, VR=15V
Qrr Reverse Recovery Charge - 52 78 nC di/dt = 100A/ps ©
2
