IRF3708 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708L
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IRF3708-IRF3708L-IRF3708S
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
. PD-93938B
International IRF3708
TOR Rectifier SMPS MOSFET IRF3708S
IRF3708L
Applications
. High Frequency DC-DC Isolated Converters HEXFET Power MOSFET
with Synchronous RectfICation for Telecom Voss RDS(on) max ID
and Industrial Use
30V 12mf2 62A
. High Frequency Buck Converters for
Computer Processor Power
Benefits
. Ultra-Low Gate Impedance
. Very Low RDS(on) at 4.5V VGS
0 Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262
and Current IRF3708 IRF3708S IRF3708L
Absolute Maximum Ratings
Symbol Parameter Max. Units
l/os Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage :12 V
In @ Tc = 25°C Continuous Drain Current, VGs @ 10V 62
ID @ Tc = 70°C Continuous Drain Current, VGS @ 10V 52 A
IDM Pulsed Drain Current© 248
Po @Tc = 25°C Maximum Power Dissipation© 87 W
Po @Tc = 70°C Maximum Power Dissipation© 61 W
Linear Derating Factor 0.58 W/°C
To , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Rea; Junction-to-Case - 1.73
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - "C/W
ReJA Junction-to-Ambient - 62
RQJA Junction-to-Ambient (PCB mount)' .-.- 40
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co through © are on page 10
WWW. irf.com 1
8/22/00
IRF3708/3708S/3708L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 30 - - V VGs = 0V, ID = 250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.028 - V/°C Reference to 25°C, ID = 1mA
- 8 12.0 VGS =10V,ID = 15A ©
RDS(on) Static Drain-to-Source On-Resistance - 9.5 13.5 mn VGs = 4.5V, ID = 12A ©
- 14.5 29 VGS = 2.8V, ID = 7.5A ©
Veggh) Gate Threshold Voltage 0.6 - 2.0 V VDs = VGs, ID = 250PA
. - - 20 Vos = 24V, VGS = 0V
loss Drain-to-Source Leakage Current _ - 100 HA Vos = 24V, VGS = 0V, To = 125°C
Gate-to-Source Forward Leakage - - 200 VGS = 12V
less Gate-to-Source Reverse Leakage - - -200 nA VGs = -12V
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 49 - - S Vos = 15V, ID = 50A
% Total Gate Charge - 24 - ID = 24.8A
Qgs Gate-to-Source Charge - 6.7 - nC Vos = 15V
qu Gate-to-Drain ("Miller") Charge - 5.8 - VGS = 4.5V (3)
Qoss Output Gate Charge - 14 21 N/ss = 0V, ID = 24.8A, Vos = 15V
tdwn) Turn-On Delay Time - 7.2 - VDD = 15V
tr Rise Time - 50 - ns ID = 24.8A
td(off) Turn-Off Delay Time - 17.6 - R3 = 0.69
" Fall Time - 3.7 - VGS = 4.5V ©
Ciss Input Capacitance - 2417 - VGS = 0V
Coss Output Capacitance - 707 - Vos = 15V
Crss Reverse Transfer Capacitance - 52 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 213 mJ
IAR Avalanche CurrentC) - 62 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 62 A showing the
ISM Pulsed Source Current - - 248 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V To = 25°C, Is = 31A, Vss = 0V ©
- 0.80 - To =125°C, Is = 31A, VGs = 0V ©
trr Reverse Recovery Time - 41 62 ns To = 25°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge - 64 96 n0 di/dt = 100/Ups ©
trr Reverse Recovery Time - 43 65 ns To = 125°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge - 70 105 nC di/dt = 100A/ps ©
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