IRF3707ZPBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Proce ..
IRF3707ZS ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQg Converters for Comput ..
IRF3708 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93938BIRF3708SMPS MOSFET IRF3708SIRF3708L
IRF3708L ,30V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplications®HEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectific ..
IRF3708S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplications®HEXFET Power MOSFET High Frequency DC-DC Isolated Converterswith Synchronous Rectific ..
IRF3709 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DCV R max IDSS DS(on) D Converters wi ..
IS61S6432-133TQ , 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-5PQ , 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-5TQI , 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61SF6432-10PQ , 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SF6432-10TQI , 64K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SP12832-133TQ , 128K x 32 SYNCHRONOUS PIPELINED STATIC RAM
IRF3707ZPBF
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
ISER Rectifier
Applications
q High Frequency Synchronous Buck
Converters for Computer Processor Power
q Lead-Free
Benefits
. Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
o Fully Characterized Avalanche Voltage
and Current
PD - 95333A
lRF3707ZPbF
iRF3707ZSPbF
IRF3707ZLPbF
HEXFET@ Power MOSFET
RDSM) max
9dimf2
TO-220AB D2Pak TO-262
IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ To = 25°C Continuous Drain Current, Ves @ 10V s 596) A
ID @ Tc = 100°C Continuous Drain Current, Vss © 10V © 42CO
IDM Pulsed Drain Current © 230
PD @Tc = 25°C Maximum Power Dissipation 57 W
PD @Tc = 100°C Maximum Power Dissipation 28
Linear Derating Factor 0.38 W/°C
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case -- 2.653 °C/W
Rocs Case-to-Sink, Flat Greased Surface © 0.50 -
ROJA Junction-to-Ambient © - 62
RoJA Junction-to-Ambient (PCB Mount) © --- 40
Notes OD through (D are on page 12
1
05/08/08
IRF3707Z/S/LPbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.5 m9 Vas = 10V, ID = 21A ©
- 10 12.5 Vss=4.5V, |D=17A ©
VGS(th) Gate Threshold Voltage 1.35 1.80 2.25 V VDS = Vss, ID = 25pA
AVGS(Ih)/ATJ Gate Threshold Voltage Coefficient - -5.3 - mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 pA I/rss = 24V, Vss = 0V
-- -- 150 Vos = 24V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 81 - - S Vos = 15V, ID = 17A
(A, Total Gate Charge - 9.7 15
0951 Pre-Vth Gate-to-Source Charge - 2.8 - Vos = 15V
0952 Post-Wh Gate-to-Source Charge - 1.0 - nC Vas = 4.5V
di Gate-to-Drain Charge - 3.4 - ID = 17A
ngdr Gate Charge Overdrive - 2.5 - See Fig. 16
st Switch Charge (0952 + di) - 4.4 -
Qoss Output Charge - 6.2 - nC I/rss = 16V, Vss = OV
td(on) Turn-On Delay Time -- 9.8 -- VDD = 15V, Vss = 4.5V ©
t, Rise Time -- 41 -- ID = 17A
fawn) Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 3.6 -
Ciss Input Capacitance - 1210 - l/ss = 0V
Coss Output Capacitance - 260 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS se e ergy 40
IAR e rre 23
EAR e nergy 5.7
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 59© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 230 integral reverse 5
(Body Diode) C) p-n junction diode. S
Vso Diode Forward Voltage -- -- 1.0 V TJ = 25°C, Is = 17A, l/tss = 0V ©
tr, Reverse Recovery Time - 14 21 ns To = 25°C, IF = 17A, Va, = 15V
l Reverse Recovery Charge - 5.2 7.8 nC di/dt = 100A/ps ©
2
