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IRF3707ZCL-IRF3707ZCS
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 9478413
llRF3707ZCS
IRF3707ZCL
International
TOR Rectifier
Applications HEXFET0 Power MOSFET
q High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max Clg
30V 9.5mQ 9.7nC
Benefits 4.3;
0 Low RDS(on) at 4.5V Vss "ii-'j'it'it
o Ultra-Low Gate Impedance i
q Fully Characterized Avalanche Voltage
and Current
11(,isk)
D2Pak TO-262
IRF3707ZCS lRF3707ZCL
Absolute Maximum Ratings
Parameter Max. Units
l/rss Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage 1 20
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 59© A
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 42©
|DM Pulsed Drain Current C) 230
PD @TC = 25°C Maximum Power Dissipation 57 W
PD @TC = 100°C Maximum Power Dissipation 28
Linear Derating Factor 0.38 W/°C
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 2.653 °C/W
ROJA Junction-to-Ambient (PCB Mount) s - 40
Notes OD through © are on page 11
1
12/04/03
IRF3707ZCS/L International
TOR ilectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.5 9.5 mn Vss = 10V, ID = 21A ©
- 10 12.5 Ves = 4.5V, ID = 17A ©
Vesuh) Gate Threshold Voltage 1.35 1.80 2.25 V Vros = Vas, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.3 - mV/°C
'Dss Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, Vas = 0V
- - 150 Vros = 24V, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -1OO Ves = -20V
gfs Forward Transconductance 81 - - S Vros = 15V, b = 17A
Qg Total Gate Charge - 9.7 15
0951 Pre-Vth Gate-to-Source Charge - 2.8 -- Vas = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 3.4 - ID = 17A
ngd, Gate Charge Overdrive -- 2.5 - See Fig. 16
QSW Switch Charge (0952 + di) - 4.4 -
Qoss Output Charge - 6.2 - nC Vros = 16V, Vas = ov
td(on) Turn-On Delay Time - 9.8 -- VDD = 15V, Ves = 4.5V ©
t, Rise Time _ 41 - b =17A
tum) Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 3.6 -
Ciss Input Capacitance - 1210 - Vss = 0V
Coss Output Capacitance - 260 - pF Vos = 15V
Crss Reverse Transfer Capacitance -- 130 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
ng e e ergy 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 59© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 230 integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - - 1.0 V To = 25°C, Is = 17A, I/ss = 0V s
trr Reverse Recovery Time - 14 21 ns TJ = 25°C, IF = 17A, VDD = 15V
a,, Reverse Recovery Charge - 5.2 7.8 nC di/dt = 100A/ps ©
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