IRF3707 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707L
IRF3707PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications®HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
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IRF3707SPBF , HEXFET Power MOSFET
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IS61NVP25672-200B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP25672-250B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP25672-250B , 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NW6432-5TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-7TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61QDB21M36-250M3 , 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 2) Synchronous SRAMs
IRF3707-IRF3707PBF-IRF3707S
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
o High Frequency DC-DC Isolated
SMPS MOSFET
PD - 93937B
IRF3707
IRF3707S
IRF3707L
HEXFET© Power MOSFET
Converters with S nchronous Rectification
y . Voss RDS(on) max ID
for Telecom and Industrial use
. 30V 12.5mQ 62A
. High Frequency Buck Converters for
Computer Processor Power
Benefits
. Ultra Low Gate Impedance i,tt,fi' ‘p
. Very Low RDS(on) "iilifi;',i'1,
o Fully Characterized Avalanche Voltage b.
and Current
TO-220AB D2Pak TO-262
IRF3707 IRF3707S IRF3707L
Absolute Maximum Ratings
Symbol Parameter Max. Units
l/os Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage l 20 V
In @ Tc = 25°C Continuous Drain Current, VGs @ 10V 62
ID @ Tc = 70°C Continuous Drain Current, VGS @ 10V 52 A
IDM Pulsed Drain Current© 248
Po @Tc = 25°C Maximum Power Dissipation© 87 W
Po @Tc = 70°C Maximum Power Dissipation© 61 W
Linear Derating Factor 0.59 mW/°C
To , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Rea; Junction-to-Case - 1.73
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - "C/W
ReJA Junction-to-Ambient - 62
RQJA Junction-to-Ambient (PCB mount)' .-.- 40
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co through © are on page 10
1
8/22/00
IRF3707/3707S/3707L International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.027 - V/°C Reference to 25''C, ID = 1mA
. . . - 9.0 12.5 VGs = 10V, ID = 15A ©
RDS(on) Static Drain-to-Source On-Resistance - 12.6 17 mn VGS = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current _- _- 12000 pA VS: __- ig,' x2: . g, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 37 -.- .-.- S Vos = 15V, ID = 49.6A
Qg Total Gate Charge - 19 - lo = 24.8A
Qgs Gate-to-Source Charge - 8.2 - nC VDs = 15V
qu Gate-to-Drain ("Miller") Charge - 6.3 - VGS = 4.5V ©
Qoss Output Gate Charge - 18 27 V63 = 0V, Vros = 15V
tdem) Turn-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 78 - ns ID = 24.8A
td(off) Turn-Off Delay Time - 11.8 - Rs = 1.89
tf Fall Time - 3.3 - N/ss = 4.5V ©
Ciss Input Capacitance - 1990 - VGs = 0V
Cass Output Capacitance - 707 - Vos = 15V
Crss Reverse Transfer Capacitance - 50 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 213 m]
IAR Avalanche CurrentCD - 62 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 62 A showing the
ISM Pulsed Source Current - - 248 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V To = 25°C, Is = 31A, Vss = 0V ©
- 0.8 - To =125"C, Is = 31A, VGs = 0V ©
trr Reverse Recovery Time - 39 59 ns To = 25°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge - 49 74 nC di/dt = 100/Ups G)
trr Reverse Recovery Time - 42 63 ns To = 125°C, IF = 31A, VR=20V
G, Reverse Recovery Charge - 62 93 nC di/dt = 100A/ps ©
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