IRF3706PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIRF3706PbFIRF3706SPbFSMPS MOSFETIRF3706LPbF
IRF3706S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageIRF3706IRF3706SSMPS MOSFETIRF3706L
IRF3707 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707L
IRF3707PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications®HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
IRF3707S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707L
IRF3707SPBF , HEXFET Power MOSFET
IS61NVF102418-7.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NVP25672-200B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP25672-250B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP25672-250B , 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NW6432-5TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-7TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IRF3706PBF
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Applications
0 High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial Use
c High Frequency Buck Converters for
Computer Processor Power
SMPS MOSFET
PD - 95385
IRF3706PbF
IRF3706SPbF
IRF3706LPbF
HEXFET® Power MOSFET
RDS(on) max ID
8.5mS2 77A©
o Lead-Free
Benefits
q Ultra-Low Gate Impedance , v'itiiii) ttiii)) gilt,
0 Very Low RDS(on) at 4.5V VGS 'ici-s "iri'i'ii5, ' _
o Fully Characterized Avalanche Voltage
and Current TO-220AB D2Pak TO-262
IRF3706 IRF3706S IRF3706L
Absolute Maximum Ratings
Symbol Parameter Max. Units
V33, Drain-Source Voltage 20 V
I/ss Gate-to-Source Voltage I 12 V
l; © Tc = 2YC Continuous Drain Current v.33 © 10V 77 t
I; © Tc = IOO‘C Continuous Drain Current, v.39 @ 10V 54 A
lm' Pulsed Dram Current 280
PD @Tc = 252C Maximum, Power Dissipation _ 88 A
PD ttTc = 100'C Maximum Power Dissipation [ 44 WA
Linear Derating Factor (159 Wr'C
T. ' Tam Junctwon and Storage Temperature Range -55 to + 175 'C
Thermal Resistance
Parameter Typ. Max. Units
Rrcc Junction-to-Case - 17
Recs Case-to-SV r-lat. Greased Surface " 0 50 - 'C/W
RBJA Junction-to-Amb em - - 62
Res; Junction-to-Ambient (PCS mount) - C)
Notes C) through © are on page 11
06/08/04
706/S/LPbF
Static @ Tu = 25°C (unless otherwise specified)
International
'rn'D PorfiFior
Parameter Min. Typ. Max. Units Conditions
V(Bamss Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
AVGgapss/ATJ Breakdown Voltage Temp. Coefhcient - 0.021 - W'C Reference to 25''C, ID = 1mA
- 6.0 8.5 Vss = 10V, ID = 15A CCS),
RDS(on) Static Drain-to-Source On-Resistance - 7.3 10.5 mg Vss = VEsN, ID = 12A .3;
- 11 22 V65 = 2.8V. ID = 7.5A Cs')
Vosm Gate Threshold Voltage 0.6 - 2.0 V Vos = Vos, ID = 250pA
loss Drain-to-Source Leakage Current T, : 12000 PA V2: , 12V 1:: C, g, Tu = 125,0
less Gate-to-Source Forward Leakage - - 200 n A Vss = 12V
Gate-to-Source Reverse Leakage - - -200 Vss = -12V
Dynamic @ Tu = 25''C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gs Forward Transconductance 53 - - S Vros = 16V, ID = 57A
% Total Gate Charge - 23 35 ID = 28A
Qgs Gate-to-Source Charge - 8.0 12 nC Vros = 10V
Om Gate-to-Drain ("Miller") Charge - 5.5 83 Vos =4.5V L;
Qoss Output Gate Charge - 16 24 V65 = 0V, Vos = 10V
fawn) Tum-On Delay Time - 6fl - VDD = 10V
t, Rise Time - 87 - ns ID = 28A
timm Tum-Off Delay Time - 17 - Ro = 1.8!)
tf Fall Time - 4,8 - Vos = 4.5V _
Css Input Capacitance - 2410 - Vos = 0V
Cos, Output Capacitance - 1070 - Vos = 10V
Crss Reverse Transfer Capacitance - 140 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy wl'l - 220 mJ
IAR Avalanche Current: - 28 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current In MOSFET symbol D
(Body Diode) - - Tre", A showing the
ISM Pulsed Source Current _ _ 280 integral reverse G
(Body Diode) l' p-n junction diode. 5
V5.3 Diode Forward Voltage - Ofl8 1.3 V TJ = 25°C, ls = 36A, Vos = 0V j
- 0.82 - T., = 125'C, ls = 36A, Vas = 0V C.
t,, Reverse Recovery Time - 45 68 ns T., = 25'C, lr: = 36A, VR=20V
Q,, Reverse Recovery Charge - 65 98 nC dildt=100Alps -
1,, Reverse Recovery Time - 49 74 ns Tu = 125°C, IF = 36A, VR=20V
Q,, Reverse Recovery Charge - 78 120 nC dildt=100Alps _
2
