IRF3706S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageIRF3706IRF3706SSMPS MOSFETIRF3706L
IRF3707 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707L
IRF3707PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications®HEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Re ..
IRF3707S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 93937BIRF3707IRF3707SSMPS MOSFETIRF3707L
IRF3707SPBF , HEXFET Power MOSFET
IRF3707STRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max I Converters with Synch ..
IS61NVF102418-7.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NVP25672-200B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP25672-250B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP25672-250B , 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IS61NW6432-5TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IS61NW6432-7TQ , 64K x 32 SYNCHRONOUS STATIC RAM WITH NO-WAIT STATE BUS FEATURE
IRF3706 -IRF3706S
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 93936C
IRF3706
IRF3706S
IRF3706L
HEXFET© Power MOSFET
International
TOR Rectifier SMPS MOSFET
Applications
. High Frequency DC-DC Isolated
nv rwih nhrn R ifi ion
Co erte s t Sy c , ous ect cat 0 Voss RDS(on) max ID
for Telecom and Industrial Use
. 20V 8.5mQ 77A©
0 High Frequency Buck Converters for
Computer Processor Power
Benefits
o Ultra-Low Gate Impedance t, "gilt: ttiii)), 4ii,itt
0 Very Low RDS(on) at 4.5V VGS _ V . h: ,
o Fully Characterized Avalanche Voltage
and Current TO-220AB D2Pak TO-262
IRF3706 IRF3706S IRF3706L
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage d: 12 V
ID @ Tc = 25°C Continuous Drain Current, Veg @ 10V 77©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 54 A
IDM Pulsed Drain Current LO 280
Pro @Tc = 25''C Maximum Power Dissipation© 88 W
PD @Tc = 100°C Maximum Power Dissipation© 44 W
Linear Derating Factor 0.59 W/°C
TSTSTG Junction and Storage Temperature Range -55 to + 175 "C
Thermal Resistance
Parameter Typ. Max. Units
Rox: Junction-to-Case® - 1.7
ROcs Case-to-Sink, Flat, Greased Surface © 0.50 - ''CIW
ROJA Junction-to-Ambient C9CO - 62
ROJA Junction-to-Ambient( PCB mount)S© - 40
Notes C) through C) are on page 11
1
12/9/04
IRF3706/S/L
International
Static @ T, = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltag 20 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coeffic - 0.021 - Vl°C Reference to 25°C, ID = 1mA
- 6.0 8.5 I/ss =10V,ID =15A0D
RDS(On) Static Drain-to-Source On-Resista - 7.3 10.5 mg Ves = 4.5V, ID = 12A©
- 11 22 V68 = 2.8V, ID = 7.5A ©
VGSuh) Gate Threshold Voltage 0.6 - 2 V I/os = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 16V, VGs = 0V
- - 100 Vhs-- 16V, VGS= 0V, Tv-- 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGs = 12V
Gate-to-Source Reverse Leakage - - -200 VGS = -12V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 53 - - S Vos = 16V, ID = 57A
Rg Gate Resistance - 1.8 - Q
% Total Gate Charge - 23 35 ID = 28A
095 Gate-to-Source Charge - 8.0 12 nC Vos = 10V
di Gate-to-Drain ("Miller") Charge - 5.5 8.3 VGs = 4.5V oo
0055 Output Gate Charge - 16 24 I/ss = 0V, Vos =10V
td(on) Turn-On Delay Time - 6.8 - VDD = 10V
t, Rise Time - 87 - ID = 28A
td(om Turn-Off Delay Time - 17 - ns Re = 1-39
tr Fall Time - 4.8 - VGS = 4.5V ©
Ciss Input Capacitance .-.-._ 2410 ___ VGs = 0V
Cass Output Capacitance - 1070 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© _ 220 mJ
|AR Avalanche Current CO - 28 A
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
IS Continuous Source Current - - 77© MOSFET symbol D
(Body Diode) A showing the i:
ISM Pulsed Source Current - - 280 integral reverse G E
(Body Diode) OD p-n junction diode. fl
VSD Diode Forward Voltage - 0.88 1.3 V Tu = 25°C, ls = 36A, VGS = 0V Ce)
- 0.82 - To =125°C,Is = 36A, VGS = OV co
trr Reverse Recovery Time - 45 68 ns TJ = 25°C, IF = 36A, VR=20V
Qrr Reverse Recovery Charge - 65 98 nC di/dt = 100A/ps©
tr, Reverse Recovery Time - 49 74 ns TJ = 125°C, IF = 36A, VR=20V
er Reverse Recovery Charge - 78 120 no di/dt = 100A/ps©
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