IRF3704STRRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous R ..
IRF3704Z ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R max Converters for Computer ..
IRF3704ZS ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package IRF3704ZIRF3704ZSIRF3704ZL
IRF3706 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous R ..
IRF3706PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIRF3706PbFIRF3706SPbFSMPS MOSFETIRF3706LPbF
IRF3706S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageIRF3706IRF3706SSMPS MOSFETIRF3706L
IS61NP25636-133TQ , 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NSCS25672-250B , RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM
IS61NVF102418-7.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NVP25672-200B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP25672-250B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP25672-250B , 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IRF3704STRRPBF
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD - 95527
ifi IRF3704PbF
TOR Rech Ier SMPS MOSFET IRF3704SPbF
. . IRF3704LPbF
Applications ©
o High Frequency DC-DC Isolated HEXFET Power MOSFET
Converters with Synchronous Rectification V R max I
for Telecom and Industrial use DSS DS(on) D
o High Frequency Buck Converters for 20V 9.0mQ 77AS
Computer Processor Power
. Lead-Free
Benefits ,.
o Ultra-Low Gate Impedance "itil):)) ‘. 4si,it
m _ Vi . "s "w,
x g _ V _ N,
0 Very Low RDS(On) Q. {I "s, _
a Fully Characterized Avalanche Voltage
and Current TO-22OAB D2Pak TO-262
IRF3704 IRF3704S IRF3704L
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage t 20 V
In @ To = 25°C Continuous Drain Current, l/ss © 10V 77 S
ID @ To = 70°C Continuous Drain Current, I/ss @ 10V 64 A
IDM Pulsed Drain Current© 308
PD @Tc = 25°C Maximum Power Dissipation@ 87 W
PD @Tc = 70°C Maximum Power Dissipation© 61 W
Linear Derating Factor 0.59 mW/°C
To , Tsms Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Fhuc Junction-to-Case - 1 .73
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient) - 62
RQJA Junction-to-Ambient (PCB mount)* - 40
* When mounted on I" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co through 60 are on page 10
1
7/20/04
IRF3704/S/LPbF
International
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 -- -- V Vss = 0V, ID = 250uA
AV(BF|)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - V/°C Reference to 25°C, ID = 1mA
. . . - 6.3 9.0 l/ss =1OV, ID = 15A ©
Roswn) Static Drain-to-Source On-Resistance - 9.8 13.5 m9 VGS = 4.5V, Ir) = 12A ©
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current : : 12:0 pA VS: : 12$ V2: : 3V Tu = 12500
less Gate-to-Source Forward Leakage - -- 200 n A VGs = 16V
Gate-to-Source Reverse Leakage - - -2OO Vas = -16V
Dynamic (ti) To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 42 - - S Vos = 10V, ID = 57A
09 Total Gate Charge - 19 - ID = 28.4A
Qgs Gate-to-Source Charge - 8.1 - nC VDS = 10V
qu Gate-to-Drain ("Miller") Charge - 6.4 - Vss = 4.5V ©
Qoss Output Gate Charge - 16 24 Vas = 0V, VDs = 10V
td(on) Turn-On Delay Time - 8.4 - VDD = 10V
tr Rise Time - 98 - ns ID = 28.4A
td(0ff) Turn-Off Delay Time - 12 - Rs = 1.89
if Fall Time - 5.0 - VGS = 4.5V ©
Ciss Input Capacitance - 1996 - Vss = ov
Coss Output Capacitance - 1085 - Vos = 10V
Crss Reverse Transfer Capacitance - 155 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 216 mJ
IAR Avalanche CurrentCD - 71 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ - 77@ A showing the
ISM Pulsed Source Current - - 308 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - 0.88 1.3 V Tu = 25°C, Is = 35.5A, l/ss = 0V ©
- 0.82 - To = 125°C, ls = 35.5A, Vas = 0V ©
trr Reverse Recovery Time - 38 57 ns To = 25°C, IF = 35.5A, VR=20V
ar, Reverse Recovery Charge - 45 68 n0 di/dt = 100A/ps (3
trr Reverse Recovery Time - 41 62 ns TJ = 125°C, IF = 35.5A, VR=20V
G, Reverse Recovery Charge - 50 75 nC di/dt = 100A/ps G)
2
