IRF3704STRR ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rec ..
IRF3704STRRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous R ..
IRF3704Z ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R max Converters for Computer ..
IRF3704ZS ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package IRF3704ZIRF3704ZSIRF3704ZL
IRF3706 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsHEXFET Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous R ..
IRF3706PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageIRF3706PbFIRF3706SPbFSMPS MOSFETIRF3706LPbF
IS61NP25636-133TQ , 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NSCS25672-250B , RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM
IS61NVF102418-7.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
IS61NVP25672-200B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVP25672-250B1 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NVVP25672-250B , 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM
IRF3704-IRF3704L-IRF3704PBF-IRF3704S-IRF3704STRL-IRF3704STRR
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier SMPS MOSFET
Applications
0 High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
o High Frequency Buck Converters for
Computer Processor Power
PD - 93888B
IRF3704
IRF3704S
IRF3704L
HEXFETO Power MOSFET
Voss RDS(on) max ID
20V 9.0mg2 77AS
Benefits
. Ultra-Low Gate Impedance t'Ris,
. Very Low RDS(on)
. Fully Characterized Avalanche Voltage
and Current
TO-220AB D2Pak TO-262
IRF3704 IRF3704S IRF3704L
Absolute Maximum Ratings
Symbol Parameter Max. Units
l/os Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage l 20 V
In @ Tc = 25°C Continuous Drain Current, VGs @ 10V 77 co
ID @ Tc = 70°C Continuous Drain Current, VGS @ 10V 64 A
IDM Pulsed Drain CurrentC) 308
Po @Tc = 25°C Maximum Power Dissipation® 87 W
Po @Tc = 70°C Maximum Power Dissipation® 61 W
Linear Derating Factor 0.59 mW/°C
To , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
Rea; Junction-to-Case - 1.73
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - "C/W
ReJA Junction-to-Ambient) - 62
RQJA Junction-to-Ambient (PCB mount)' .-.- 40
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co through © are on page 10
8/22/00
IRF3704/3704S/3704L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.021 - V/°C Reference to 25''C, ID = 1mA
. . . - 6.3 9.0 VGs = 10V, ID = 15A ©
RDS(on) Static Drain-to-Source On-Resistance - 9.8 13.5 mn VGS = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250PA
loss Drain-to-Source Leakage Current _- _- 12000 pA VS: __- 12x x2: . g, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 42 -.- .-.- S Vos = 10V, ID = 57A
Qg Total Gate Charge - 19 - lo = 28.4A
Qgs Gate-to-Source Charge - 8.1 - nC VDs = 10V
qu Gate-to-Drain ("Miller") Charge - 6.4 - VGS = 4.5V ©
Qoss Output Gate Charge - 16 24 V63 = 0V, Vros = 10V
tdem) Turn-On Delay Time - 8.4 - VDD = 10V
tr Rise Time - 98 - ns ID = 28.4A
td(off) Turn-Off Delay Time - 12 - Rs = 1.89
tf Fall Time - 5.0 - N/ss = 4.5V ©
Ciss Input Capacitance - 1996 - VGs = 0V
Cass Output Capacitance - 1085 - Vos = 10V
Crss Reverse Transfer Capacitance - 155 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 216 m]
IAR Avalanche Current0) - 71 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 77© A showing the
ISM Pulsed Source Current _ - 308 integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V Tu = 25°C, Is = 35.5A, Vss = 0V ©
- 0.82 - To = 125°C, Is = 35.5A, VGs = 0V ©
trr Reverse Recovery Time - 38 57 ns To = 25°C, IF = 35.5A, VR=20V
Qrr Reverse Recovery Charge - 45 68 nC di/dt = 100A/ps ©
tn Reverse Recovery Time - 41 62 ns To = 125°C, IF = 35.5A, VR=20V
Qrr Reverse Recovery Charge - 50 75 nC di/dt = 100/Vps ©
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